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NXP Semiconductors Diodes & Rectifiers 78

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
BA277,135 by NXP Semiconductors

BA277,135

NXP Semiconductors

BA277,135 by NXP Semiconductors is a single rectifier diode designed for surface mount applications. It operates at a max temp of 150 °C, with a forward voltage of 1V and can handle up to 0.1A current. Ideal for power management in compact electronic devices.

SINGLE

RECTIFIER DIODE

1 V

e3

1

1

150 Cel

.1 A

35 V

Rectifier Diodes

YES

Tin (Sn)

BA277,335 by NXP Semiconductors

BA277,335

NXP Semiconductors

BA277,335 by NXP Semiconductors is a single rectifier diode designed for surface mount applications. It operates at a max temp of 150 °C, with a forward voltage of 1V and supports up to 0.1A current. Ideal for efficient power management in electronic circuits.

SINGLE

RECTIFIER DIODE

1 V

e3

1

1

150 Cel

.1 A

35 V

Rectifier Diodes

YES

Tin (Sn)

BY329-1000,127 by NXP Semiconductors

BY329-1000,127

NXP Semiconductors

BY329-1000,127 from NXP Semiconductors is a single rectifier diode ideal for high-voltage applications. It features a max reverse recovery time of 0.15 µs, operates at up to 150 °C, and supports currents up to 8 A with a peak reverse voltage of 1000 V. This diode is perfect for power supply circuits and energy conversion systems.

SINGLE

RECTIFIER DIODE

1.8 V

e3

80 A

1

1

150 Cel

8 A

1000 V

.15 us

Rectifier Diodes

NO

Matte Tin (Sn)

BY329-1200,127 by NXP Semiconductors

BY329-1200,127

NXP Semiconductors

BY329-1200,127 from NXP Semiconductors is a single rectifier diode ideal for high-voltage applications. It features a max reverse recovery time of 0.135 µs, operates at up to 150 °C, and supports currents up to 8 A with a peak reverse voltage of 1200 V. This diode is perfect for power supply circuits and motor control systems.

SINGLE

RECTIFIER DIODE

1.8 V

e3

80 A

1

1

150 Cel

8 A

1200 V

.135 us

Rectifier Diodes

NO

Matte Tin (Sn)

BY329X-1500,127 by NXP Semiconductors

BY329X-1500,127

NXP Semiconductors

BY329X-1500,127 from NXP Semiconductors is a single rectifier diode ideal for high-voltage applications. It operates at a max temp of 150 °C, with a forward voltage of 1.5V and supports up to 11A output current. Perfect for power supply circuits and energy conversion systems.

SINGLE

RECTIFIER DIODE

1.5 V

75 A

1

1

150 Cel

11 A

1500 V

Rectifier Diodes

NO

BY359-1500,127 by NXP Semiconductors

BY359-1500,127

NXP Semiconductors

BY359-1500,127 by NXP Semiconductors is a single rectifier diode with a max reverse recovery time of 0.6 us and a max operating temperature of 125°C. It has a max forward voltage of 2.3V and output current of 6.5A, making it suitable for high-voltage applications requiring fast switching capabilities.

SINGLE

RECTIFIER DIODE

2.3 V

e3

60 A

1

1

125 Cel

6.5 A

1500 V

.6 us

Rectifier Diodes

NO

Matte Tin (Sn)

BY359X-1500,127 by NXP Semiconductors

BY359X-1500,127

NXP Semiconductors

BY359X-1500,127 by NXP Semiconductors is a single rectifier diode with max operating temp of 150°C. It has a VF of 2V and can handle up to 10A output current. Ideal for high voltage applications due to its 1500V peak reverse voltage capability and 66A non-repetitive forward current rating.

SINGLE

RECTIFIER DIODE

2 V

66 A

1

1

150 Cel

10 A

1500 V

Rectifier Diodes

NO

BY459-1500,127 by NXP Semiconductors

BY459-1500,127

NXP Semiconductors

BY459-1500,127 from NXP Semiconductors is a single rectifier diode ideal for high-voltage applications. It features a max reverse recovery time of 0.25 µs, operates at up to 150 °C, and handles 12 A with a peak reverse voltage of 1500 V. Perfect for power supply circuits and energy conversion systems.

SINGLE

RECTIFIER DIODE

1.3 V

e3

110 A

1

1

150 Cel

12 A

1500 V

.25 us

Rectifier Diodes

NO

Matte Tin (Sn)

BY459X-1500S,127 by NXP Semiconductors

BY459X-1500S,127

NXP Semiconductors

BY459X-1500S,127 by NXP Semiconductors is a single rectifier diode with a max reverse recovery time of 0.22 us and operating temperature of 150°C. It has a max forward voltage of 1.35V, output current of 10A, and repetitive peak reverse voltage of 1500V. Ideal for high-power applications requiring efficient rectification and voltage regulation.

SINGLE

RECTIFIER DIODE

1.35 V

110 A

1

1

150 Cel

10 A

1500 V

.22 us

Rectifier Diodes

NO

NUR460/L02,112 by NXP Semiconductors

NUR460/L02,112

NXP Semiconductors

NUR460/L02,112 from NXP Semiconductors is a single rectifier diode ideal for high-efficiency applications. It features a max reverse recovery time of 0.065 µs, operates at up to 150 °C, and supports currents up to 4 A with a peak voltage of 600 V. This diode is perfect for power management in various electronic devices.

SINGLE

RECTIFIER DIODE

1.05 V

110 A

1

1

150 Cel

4 A

600 V

.065 us

Rectifier Diodes

NO

NUR460,133 by NXP Semiconductors

NUR460,133

NXP Semiconductors

NUR460,133 by NXP Semiconductors is a single rectifier diode ideal for high-efficiency applications. It features a max reverse recovery time of 0.065 µs, operates at up to 150 °C, and supports 600 V peak reverse voltage. This diode is perfect for power management in various electronic devices.

SINGLE

RECTIFIER DIODE

1.05 V

110 A

1

1

150 Cel

4 A

600 V

.065 us

Rectifier Diodes

NO

NXPS20S100C,127 by NXP Semiconductors

NXPS20S100C,127

NXP Semiconductors

NXPS20S100C,127 from NXP Semiconductors is a Schottky rectifier diode designed for high-efficiency applications. It operates at a max temp of 175 °C, supports up to 10 A output current, and has a peak reverse voltage of 100 V. Ideal for power management in electronics.

RECTIFIER DIODE

.58 V

e3

150 A

175 Cel

10 A

100 V

Rectifier Diodes

NO

SCHOTTKY

Tin (Sn)

NXPS20S100CX,127 by NXP Semiconductors

NXPS20S100CX,127

NXP Semiconductors

NXPS20S100CX,127 by NXP Semiconductors is a Schottky rectifier diode designed for high efficiency. It operates at a max temp of 175 °C, supports up to 10 A output current, and has a peak reverse voltage of 100 V. Ideal for power management in various electronic applications.

RECTIFIER DIODE

.58 V

e3

150 A

175 Cel

10 A

100 V

Rectifier Diodes

NO

SCHOTTKY

Tin (Sn)

NURS360BJ by NXP Semiconductors

NURS360BJ

NXP Semiconductors

NURS360BJ from NXP Semiconductors is a single rectifier diode designed for surface mount applications. It features a max reverse recovery time of 0.075 µs, operates at up to 175 °C, and handles currents up to 3 A with a peak reverse voltage of 600 V. Ideal for high-efficiency power management in electronics.

SINGLE

RECTIFIER DIODE

1 V

100 A

1

1

175 Cel

3 A

600 V

.075 us

Rectifier Diodes

YES

BAW62,133 by NXP Semiconductors

BAW62,133

NXP Semiconductors

BAW62,133 diode by NXP Semiconductors is a single rectifier diode with a max output current of 0.25A and a max repetitive peak reverse voltage of 75V. It has a fast max reverse recovery time of 0.004us, making it suitable for applications requiring quick switching speeds in electronic circuits. The diode's glass package body material and isolated case connection ensure reliable performance at temperatures up to 200°C.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-35

O-LALF-W2

e3

1

1

1

2

200 Cel

.25 A

GLASS

ROUND

LONG FORM

260

.35 W

75 V

.004 us

NO

TIN

WIRE

AXIAL

30

BAW62,143 by NXP Semiconductors

BAW62,143

NXP Semiconductors

The NXP Semiconductors BAW62,143 is a RECTIFIER DIODE with a Max Reverse Recovery Time of 0.004 us and Max Forward Voltage of 0.75 V. It is designed for applications requiring low power dissipation and high efficiency, such as in power supplies and battery chargers.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-35

O-LALF-W2

e3

1

.5 A

1

1

2

200 Cel

.25 A

GLASS

ROUND

LONG FORM

260

.35 W

75 V

.004 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

30

BAS16W,135 by NXP Semiconductors

BAS16W,135

NXP Semiconductors

BAS16W,135 by NXP Semiconductors is a single rectifier diode with a max output current of 0.175A and a max repetitive peak reverse voltage of 100V. It has a small outline package style, operates b/w -65°C to 150°C, and features a fast reverse recovery time of 0.004 us. Ideal for applications requiring high-speed switching in compact electronic devices.

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-G3

1

1

3

150 Cel

-65 Cel

.175 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.2 W

IEC-60134

100 V

.004 us

YES

GULL WING

DUAL

PMEG6010AED,115 by NXP Semiconductors

PMEG6010AED,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

.4 V

R-PDSO-G6

e3

1

17.5 A

1

1

6

150 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

60 V

Rectifier Diodes

YES

SCHOTTKY

TIN

GULL WING

DUAL

30

1N4148,133 by NXP Semiconductors

1N4148,133

NXP Semiconductors

1N4148,133 by NXP Semiconductors is a RECTIFIER DIODE with 100V VRRM and 0.2A IF. It has 0.004us reverse recovery time and 1V VF. Widely used in electronics for signal rectification due to its fast response time and low forward voltage drop.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

e3

1

2 A

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

Not Qualified

100 V

.004 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

30

1N4148,143 by NXP Semiconductors

1N4148,143

NXP Semiconductors

1N4148,143 by NXP Semiconductors is a RECTIFIER DIODE with 100V VR, 0.2A IF, and 1V VF. Its GLASS package is ideal for applications requiring fast switching speeds in temperatures up to 200°C. With a 0.5W power dissipation rating, it suits various electronic circuits needing high-speed rectification.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

e3

1

2 A

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

Not Qualified

100 V

.004 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

30

1N4448,133 by NXP Semiconductors

1N4448,133

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.72 V

DO-35

O-LALF-W2

e3

1

.5 A

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

Not Qualified

100 V

.004 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

30

1N4448,143 by NXP Semiconductors

1N4448,143

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.72 V

DO-35

O-LALF-W2

e3

1

.5 A

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

Not Qualified

100 V

.004 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

30

PMEG2010AEK,115 by NXP Semiconductors

PMEG2010AEK,115

NXP Semiconductors

RECTIFIER DIODE; Surface Mount: YES; No. of Elements: 1; Config: SINGLE; Technology: SCHOTTKY; Maximum Operating Temperature: 150 Cel;

SINGLE

RECTIFIER DIODE

.22 V

4.5 A

1

1

150 Cel

1 A

20 V

Rectifier Diodes

YES

SCHOTTKY

1N4448,113 by NXP Semiconductors

1N4448,113

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

e3

1

2 A

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

Not Qualified

CECC50001-021

100 V

.025 uA

.004 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

30

1N914B,113 by NXP Semiconductors

1N914B,113

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-35

O-LALF-W2

1

1

2

175 Cel

.075 A

GLASS

ROUND

LONG FORM

.25 W

Not Qualified

100 V

.004 us

NO

WIRE

AXIAL

1PS181,135 by NXP Semiconductors

1PS181,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G3

e3

4 A

2

3

150 Cel

.215 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

85 V

.5 uA

.004 us

YES

TIN

GULL WING

DUAL

1PS184,115 by NXP Semiconductors

1PS184,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G3

e3

4 A

2

3

150 Cel

.215 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

85 V

.5 uA

.004 us

YES

TIN

GULL WING

DUAL

1PS184,135 by NXP Semiconductors

1PS184,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G3

e3

4 A

2

3

150 Cel

.215 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

85 V

.5 uA

.004 us

YES

TIN

GULL WING

DUAL

1PS193,115 by NXP Semiconductors

1PS193,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G3

e3

4 A

1

1

3

150 Cel

.215 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

85 V

.5 uA

.004 us

YES

TIN

GULL WING

DUAL

1PS193,135 by NXP Semiconductors

1PS193,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G3

e3

4 A

1

1

3

150 Cel

.215 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

85 V

.5 uA

.004 us

YES

TIN

GULL WING

DUAL

1PS226,135 by NXP Semiconductors

1PS226,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-G3

e3

4 A

2

3

150 Cel

.215 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

85 V

.5 uA

.004 us

YES

TIN

GULL WING

DUAL

1PS59SB10,115 by NXP Semiconductors

1PS59SB10,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-G3

e3

.6 A

1

1

3

125 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

Not Qualified

2 uA

.005 us

YES

SCHOTTKY

TIN

GULL WING

DUAL

1PS59SB14,115 by NXP Semiconductors

1PS59SB14,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-G3

e3

.6 A

2

3

125 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

30 V

2 uA

.005 us

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

1PS59SB15,115 by NXP Semiconductors

1PS59SB15,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-G3

e3

.6 A

2

3

125 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

30 V

2 uA

.005 us

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

1PS59SB16,115 by NXP Semiconductors

1PS59SB16,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-G3

e3

.6 A

2

3

125 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

30 V

2 uA

.005 us

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

1PS59SB20,115 by NXP Semiconductors

1PS59SB20,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

TO-236

R-PDSO-G3

e3

1

1

3

125 Cel

.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

SCHOTTKY

TIN

GULL WING

DUAL

BAS16T,115 by NXP Semiconductors

BAS16T,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

.715 V

R-PDSO-G3

e3

1

.5 A

1

1

3

150 Cel

-65 Cel

.155 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.17 W

Not Qualified

85 V

.004 us

Rectifier Diodes

YES

TIN

GULL WING

DUAL

30

BAS216,115 by NXP Semiconductors

BAS216,115

NXP Semiconductors

BAS216,115 by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1.25V and output current of 0.25A. It has a small outline package style, ceramic-metal sealed co-fired body material, and operates at up to 150°C. Ideal for applications requiring low reverse recovery time and high peak reverse voltage capabilities.

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-CDSO-R2

4 A

1

1

2

150 Cel

.25 A

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

260

.4 W

Not Qualified

85 V

1 uA

.004 us

Rectifier Diodes

YES

WRAP AROUND

DUAL

40

BAS216,135 by NXP Semiconductors

BAS216,135

NXP Semiconductors

BAS216,135 by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1.25V and output current of 0.25A. It has a small outline package style, ceramic-metal sealed co-fired body material, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time and low reverse current such as power supplies and battery chargers.

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-CDSO-R2

4 A

1

1

2

150 Cel

.25 A

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.4 W

Not Qualified

85 V

1 uA

.004 us

YES

WRAP AROUND

DUAL

NOT SPECIFIED

BAT254,115 by NXP Semiconductors

BAT254,115

NXP Semiconductors

BAT254,115 by NXP Semiconductors is a Schottky rectifier diode with a max forward voltage of 0.8V and output current of 0.2A. It has a fast reverse recovery time of 0.005us, making it suitable for high-speed applications in electronics requiring low power consumption and small outline packages. The diode's peak repetitive reverse voltage is 30V, ideal for circuits where efficient energy conversion is crucial.

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-CDSO-R2

.6 A

1

1

2

125 Cel

.2 A

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

30 V

.005 us

Rectifier Diodes

YES

SCHOTTKY

WRAP AROUND

DUAL

BAW62,113 by NXP Semiconductors

BAW62,113

NXP Semiconductors

The NXP Semiconductors BAW62,113 is a single rectifier diode with a max forward voltage of 1V and output current of 0.25A. It has a max reverse recovery time of 0.004us and operates at temperatures up to 200°C. This diode is commonly used in applications requiring high-speed switching and low power dissipation.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

e3

1

2 A

1

1

2

200 Cel

.25 A

GLASS

ROUND

LONG FORM

260

.35 W

Not Qualified

CECC50001-021

75 V

5 uA

.004 us

Rectifier Diodes

NO

AVALANCHE

TIN

WIRE

AXIAL

30

BY229-600,127 by NXP Semiconductors

BY229-600,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.8 V

TO-220AC

R-PSFM-T2

e3

60 A

1

1

2

150 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

600 V

.135 us

Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

BY229X-200,127 by NXP Semiconductors

BY229X-200,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.85 V

R-PSFM-T2

e3

66 A

1

1

2

150 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

200 V

.135 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BY229X-600,127 by NXP Semiconductors

BY229X-600,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.85 V

R-PSFM-T2

e3

66 A

1

1

2

150 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

600 V

.135 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BY229X-800,127 by NXP Semiconductors

BY229X-800,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.85 V

R-PSFM-T2

e3

66 A

1

1

2

150 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

800 V

.135 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BY329-1500S,127 by NXP Semiconductors

BY329-1500S,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

HIGH VOLTAGE FAST SOFT RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.6 V

TO-220AC

R-PSFM-T2

e3

75 A

1

1

2

150 Cel

11 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1500 V

.16 us

Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

BY329X-1200,127 by NXP Semiconductors

BY329X-1200,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.85 V

R-PSFM-T2

e3

71 A

1

1

2

150 Cel

7 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1200 V

.145 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BY329X-1500S,127 by NXP Semiconductors

BY329X-1500S,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

HIGH VOLTAGE FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.6 V

R-PSFM-T2

e3

75 A

1

1

2

150 Cel

11 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1500 V

.16 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE