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BAW62,133

NXP Semiconductors

BAW62,133 by NXP Semiconductors

BAW62,133 diode by NXP Semiconductors is a single rectifier diode with a max output current of 0.25A and a max repetitive peak reverse voltage of 75V. It has a fast max reverse recovery time of 0.004us, making it suitable for applications requiring quick switching speeds in electronic circuits. The diode's glass package body material and isolated case connection ensure reliable performance at temperatures up to 200°C.

Median Price

$0.058

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Bürklin Elektronik

Germany . 7,257 parts In-Stock

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$0.058

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Chip Stock

USA . 97,000 parts In-Stock

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Vyrian

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VNN

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Anansix

USA . 2,681 parts In-Stock

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Digiode

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Nova Conductors

Japan . 89 parts In-Stock

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Ampacity Inc.

Singapore . 7,158 parts In-Stock

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Semicontronic

India . 7,078 parts In-Stock

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Corohmni

South Africa . 141 parts In-Stock

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Aztec Data Supply Inc.

USA . 271 parts In-Stock

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AZTECH Wire

Italy . 383 parts In-Stock

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Corphita

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UNI Independent Distributors

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Advanced Electronics

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Unleash the power of NXP Semiconductors with the BAW62,133 diode rectifier. Crafted from high-quality materials and boasting a single configuration, this round package offers superior performance in a variety of applications. With a maximum reverse recovery time of 0.004 us and a maximum operating temperature of 200°C, this product delivers unmatched reliability and efficiency. Trust NXP Semiconductors to provide cutting-edge technology that exceeds your expectations. Experience the value and benefits of the BAW62,133 today!

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material ensures high durability and reliable performance in a variety of environments.

Config: SINGLE

The single configuration simplifies the design and integration of the diode into different circuits.

Maximum Reverse Recovery Time: 0.004 us

With an ultra-fast reverse recovery time, this diode allows for efficient switching and minimal power loss.

Package Shape: ROUND

The round package shape provides ease of installation and compatibility with standard mounting techniques.

No. of Terminals: 2

With only two terminals, this diode is easy to connect and reduces the chance of wiring errors.

Package Style (Meter): LONG FORM

The long-form package style offers greater mechanical strength and heat dissipation capabilities.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature ensures stable performance even in demanding applications.

Terminal Finish: TIN

The tin terminal finish enhances solderability and prevents corrosion for long-term reliability.

Terminal Position: AXIAL

The axial terminal position simplifies PCB layout and facilitates easy connection in a circuit.

Case Connection: ISOLATED

The isolated case connection helps prevent electrical interference and improves overall circuit performance.

Maximum Power Dissipation: 0.35 W

The high power dissipation capacity allows the diode to handle high current loads without overheating.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time of 30 seconds minimizes the risk of component damage during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures proper soldering and secure attachment during assembly.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC to DC with low voltage drop and high reliability.

Maximum Output Current: 0.25 A

The high maximum output current rating makes this diode suitable for a wide range of application requirements.

Terminal Form: WIRE

The wire terminal form offers flexibility in connection methods and simplifies installation.

Maximum Repetitive Peak Reverse Voltage: 75 V

The high repetitive peak reverse voltage rating provides protection against voltage spikes and surges.

Diode Element Material: SILICON

The silicon diode element material ensures stable and consistent performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers BAW62,133 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Maximum Output Current:

.25 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.35 W

Maximum Repetitive Peak Reverse Voltage:

75 V

Maximum Reverse Recovery Time:

.004 us

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAW62,133 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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