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BAW62T50R

National Semiconductor

BAW62T50R by National Semiconductor

BAW62T50R by National Semiconductor is a single rectifier diode with a max forward voltage of 1V and repetitive peak reverse voltage of 75V. With a fast reverse recovery time of 0.004 us, it is ideal for applications requiring efficient rectification in electronic circuits. The diode's glass package body material and axial terminal position make it suitable for various circuit designs where isolation and quick response times are crucial.

Median Price

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Chip Stock

USA . 33,000 parts In-Stock

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Nova Conductors

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Digiode

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Aztec Data Supply Inc.

USA . 3,595 parts In-Stock

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Corohmni

South Africa . 709 parts In-Stock

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Ampacity Inc.

Singapore . 1,064 parts In-Stock

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AZTECH Wire

Italy . 1,003 parts In-Stock

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Component Stockers USA

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Overview

Experience the reliability and performance of the BAW62T50R by National Semiconductor, a top-quality diode & rectifier that offers unmatched value to our customers. With National Semiconductor's reputation for excellence in manufacturing, this product is designed to meet your needs with precision and efficiency. Whether you need it for power supply applications or signal processing, the BAW62T50R delivers consistent results every time. Trust National Semiconductor to provide you with a superior product that will exceed your expectations.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material provides durability and high temperature tolerance, making this product suitable for a wide range of applications.

Maximum Reverse Recovery Time: 0.004 us

The low reverse recovery time ensures efficient operation and fast switching characteristics, making this diode a reliable choice for high-speed applications.

Maximum Forward Voltage (VF): 1 V

With a low forward voltage of 1 V, this diode offers minimal power loss and high efficiency in conducting electricity, making it an energy-efficient option.

Maximum Repetitive Peak Reverse Voltage: 75 V

The high peak reverse voltage rating of 75 V ensures that the diode can withstand voltage spikes and protect the circuit components effectively, providing reliable over-voltage protection.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures stable and consistent performance over a wide temperature range, making this diode a dependable choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers BAW62T50R attributes and parameters. Explore more Diodes & Rectifiers devices from National Semiconductor

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

75 V

Maximum Reverse Recovery Time:

.004 us

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BAW62T50R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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