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BAW62T/R

NXP Semiconductors

BAW62T/R by NXP Semiconductors

The NXP Semiconductors BAW62T/R is a single rectifier diode with a max reverse recovery time of 0.004 us and max forward voltage of 1V. It has a max output current of 0.25A and is designed for applications requiring high-speed switching in electronic circuits. With a package body material of glass, it can operate at temperatures up to 200°C, making it suitable for various industrial and automotive applications.

Median Price

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Lifecycle Status

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7

In-Stock Inventory

1k+

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Inventory MP

USA . 9,850 parts In-Stock

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Bristol Electronics

USA . 9,850 parts In-Stock

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Anansix

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Vyrian

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Digiode

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Nova Conductors

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One Stop Electronics

USA . 859 parts In-Stock

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Corohmni

South Africa . 544 parts In-Stock

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Aztec Data Supply Inc.

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Ampacity Inc.

Singapore . 967 parts In-Stock

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Semicontronic

India . 470 parts In-Stock

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AZTECH Wire

Italy . 777 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Enhance your electronic designs with the NXP Semiconductors BAW62T/R diode. Known for their top-notch quality and reliability, NXP Semiconductors delivers cutting-edge technology in the field of diodes and rectifiers. The BAW62T/R offers customers unparalleled value with its fast reverse recovery time and low reverse current. Ideal for a variety of applications, this rectifier diode is perfect for power supply circuits, voltage regulation, and signal processing. Trust NXP Semiconductors to provide you with the best components for your next project.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package provides durability and reliability to the product.

Maximum Reverse Recovery Time: 0.004 us

Fast reverse recovery time ensures efficient operation and performance.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves efficiency.

Maximum Operating Temperature: 200 °C

High operating temperature range allows for versatile applications.

Maximum Power Dissipation: 0.35 W

Efficient power dissipation capability ensures the diode can handle varying loads.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is suitable for converting AC to DC with minimal voltage drop.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop ensures minimal power loss during forward conduction.

Maximum Output Current: 0.25 A

Suitable for low to medium current applications where efficiency is key.

Technology: AVALANCHE

Avalanche diode technology provides high reliability and performance in demanding applications.

Maximum Repetitive Peak Reverse Voltage: 75 V

Suitable for applications requiring high reverse voltage capability.

Technical Specifications

Diodes & Rectifiers BAW62T/R attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Maximum Output Current:

.25 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.35 W

Qualification:

Not Qualified

Reference Standard:

CECC50001-021

Maximum Repetitive Peak Reverse Voltage:

75 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAW62T/R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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