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BAW62,113

NXP Semiconductors

BAW62,113 by NXP Semiconductors

The NXP Semiconductors BAW62,113 is a single rectifier diode with a max forward voltage of 1V and output current of 0.25A. It has a max reverse recovery time of 0.004us and operates at temperatures up to 200°C. This diode is commonly used in applications requiring high-speed switching and low power dissipation.

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Vyrian

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Aztec Data Supply Inc.

USA . 387 parts In-Stock

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Corohmni

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Singapore . 233 parts In-Stock

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AZTECH Wire

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Overview

Discover the exceptional quality and reliability of NXP Semiconductors with the BAW62,113 diode. This single-configured rectifier diode offers a fast reverse recovery time of 0.004 us and a low reverse current of 5 uA, making it ideal for a wide range of applications. With a maximum operating temperature of 200°C and a power dissipation of 0.35W, this diode provides superior performance and efficiency. Trust in NXP Semiconductors to deliver cutting-edge technology and unmatched value with the BAW62,113 diode.

Feature Benefit Bullets

Package Body Material: GLASS

The glass package body provides excellent durability and resistance to environmental factors, ensuring a longer lifespan for the diode.

Maximum Reverse Recovery Time: 0.004 us

The fast reverse recovery time ensures efficient switching performance, making this diode suitable for high-speed applications.

Maximum Reverse Current: 5 uA

The low reverse current minimizes power loss and improves the overall efficiency of the diode.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature allows for reliable performance in a wide range of environments and applications.

Maximum Power Dissipation: 0.35 W

With a high power dissipation rating, this diode can handle higher power levels without overheating, ensuring longevity and reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC), making it ideal for various electronics applications.

Maximum Forward Voltage (VF): 1 V

The low forward voltage drop of 1 V minimizes energy loss and heat generation, improving overall efficiency and performance.

Technology: AVALANCHE

The avalanche technology allows for higher voltage handling capabilities and improved reliability in high-power applications.

Technical Specifications

Diodes & Rectifiers BAW62,113 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Maximum Output Current:

.25 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.35 W

Qualification:

Not Qualified

Reference Standard:

CECC50001-021

Maximum Repetitive Peak Reverse Voltage:

75 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAW62,113 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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