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BAS216,115

NXP Semiconductors

BAS216,115 by NXP Semiconductors

BAS216,115 by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1.25V and output current of 0.25A. It has a small outline package style, ceramic-metal sealed co-fired body material, and operates at up to 150°C. Ideal for applications requiring low reverse recovery time and high peak reverse voltage capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 10,127 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,875 parts In-Stock

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Digiode

USA . 1,319 parts In-Stock

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Inventory MP

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Anansix

USA . 823 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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VNN

France . 40 parts In-Stock

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Corohmni

South Africa . 234 parts In-Stock

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$0.056

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Aztec Data Supply Inc.

USA . 4,931 parts In-Stock

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$0.130

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$0.149

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$0.136

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One Stop Electronics

USA . 834 parts In-Stock

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$1.010

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Ampacity Inc.

Singapore . 438 parts In-Stock

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AZTECH Wire

Italy . 349 parts In-Stock

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Microchip USA

USA . 8,397 parts In-Stock

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Continental Prestige Electronics

USA . 4,469 parts In-Stock

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Argo Parts USA

USA . 2,796 parts In-Stock

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UNI Independent Distributors

Spain . 1,267 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Experience the reliability and efficiency of the BAS216,115 by NXP Semiconductors. As a leading manufacturer in the industry, NXP Semiconductors delivers high-quality diodes & rectifiers that are perfect for a variety of applications. From consumer electronics to automotive systems, this product offers unmatched performance and durability. Trust in NXP Semiconductors to provide you with the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This package body material provides excellent durability and resistance to high temperatures, ensuring the product operates reliably in various conditions.

Maximum Reverse Recovery Time: 0.004 us

The low reverse recovery time ensures fast switching and efficient operation of the diode, making it suitable for high-speed applications.

Maximum Forward Voltage (VF): 1.25 V

The low forward voltage drop helps minimize power loss and improves the efficiency of the diode, making it an energy-efficient choice.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance, making it suitable for industrial applications.

Technical Specifications

Diodes & Rectifiers BAS216,115 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-CDSO-R2

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.25 A

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Current:

1 uA

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

BAS216,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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