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BAS216,135

NXP Semiconductors

BAS216,135 by NXP Semiconductors

BAS216,135 by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1.25V and output current of 0.25A. It has a small outline package style, ceramic-metal sealed co-fired body material, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time and low reverse current such as power supplies and battery chargers.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,605 parts In-Stock

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Digiode

USA . 1,586 parts In-Stock

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VNN

France . 773 parts In-Stock

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Anansix

USA . 442 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,393 parts In-Stock

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$0.010

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Aztec Data Supply Inc.

USA . 2,719 parts In-Stock

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Corohmni

South Africa . 192 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.199

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$0.181

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$0.163

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Semicontronic

India . 386 parts In-Stock

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$2.010

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$1.960

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$1.950

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386

$2.010

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One Stop Electronics

USA . 157 parts In-Stock

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$3.010

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AZTECH Wire

Italy . 702 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,570 parts In-Stock

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Microchip USA

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Corphita

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Continental Prestige Electronics

USA . 1,709 parts In-Stock

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UNI Independent Distributors

Spain . 1,346 parts In-Stock

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Argo Parts USA

USA . 375 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Discover the superior quality and reliability of the BAS216,135 by NXP Semiconductors. As a leading manufacturer in the industry of diodes & rectifiers, NXP Semiconductors delivers cutting-edge technology that meets the highest standards. This versatile product is perfect for a wide range of applications, offering customers exceptional value and benefits. From its fast reverse recovery time to its high power dissipation, this rectifier diode provides efficient performance and peace of mind. Upgrade your projects with the BAS216,135 and experience the difference today.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The use of ceramic and metal-sealed cofired materials enhances durability and reliability of the diode.

Config: SINGLE

Single configuration allows for easy integration into various circuit designs.

Surface Mount: YES

Surface mounting capability provides convenient installation and space-saving benefits.

Maximum Reverse Recovery Time: 0.004 us

The fast reverse recovery time ensures quick and efficient switching performance.

Maximum Reverse Current: 1 uA

Low reverse current helps in reducing power consumption and improving overall efficiency.

Package Shape: RECTANGULAR

Rectangular package shape offers stability and ease of handling during installation.

No. of Terminals: 2

Having two terminals simplifies the connection process and facilitates compatibility with different systems.

Package Style (Meter): SMALL OUTLINE

Small outline package style allows for compact placement on circuit boards.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures reliability and performance in various environments.

Terminal Position: DUAL

Dual terminal position enhances connectivity options for the diode.

Maximum Power Dissipation: 0.4 W

The high power dissipation rating enables the diode to handle heavy loads efficiently.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC with minimal voltage loss.

Maximum Forward Voltage (VF): 1.25 V

Low forward voltage drop helps in reducing energy loss and heat generation.

Maximum Output Current: 0.25 A

The high output current capability makes this diode suitable for various applications.

Terminal Form: WRAP AROUND

Wrap-around terminal form provides secure connections and easy soldering.

Maximum Repetitive Peak Reverse Voltage: 85 V

High reverse voltage rating ensures stable performance under varying voltage conditions.

Maximum Non Repetitive Peak Forward Current: 4 A

The diode can withstand short-term high current peaks without damage.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability for a wide range of applications.

Technical Specifications

Diodes & Rectifiers BAS216,135 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-CDSO-R2

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.25 A

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Current:

1 uA

Maximum Reverse Recovery Time:

.004 us

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAS216,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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