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BA277,335

NXP Semiconductors

BA277,335 by NXP Semiconductors

BA277,335 by NXP Semiconductors is a single rectifier diode designed for surface mount applications. It operates at a max temp of 150 °C, with a forward voltage of 1V and supports up to 0.1A current. Ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,445 parts In-Stock

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8,445

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Digiode

USA . 3,227 parts In-Stock

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3,227

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Anansix

USA . 1,135 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,038 parts In-Stock

1+ parts

$2.010

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1,038

$2.010

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AZTECH Wire

Italy . 650 parts In-Stock

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$18.960

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650

$18.960

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Microchip USA

USA . 4,558 parts In-Stock

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UNI Independent Distributors

Spain . 3,735 parts In-Stock

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Northwest PG Solutions

USA . 1,485 parts In-Stock

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$4.235

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$4.235

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Corphita

USA . 1,331 parts In-Stock

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Native Components

USA . 298 parts In-Stock

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$4.192

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298

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$4.192

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Overview

Elevate your designs with the BA277,335 from NXP Semiconductors, a trusted leader in innovative solutions. This high-quality rectifier diode excels in reliability and efficiency, ensuring optimal performance in various applications like power management and consumer electronics. With its robust thermal capabilities and compact surface mount design, this diode not only simplifies your assembly process but also enhances the longevity of your devices. Experience the unmatched value and peace of mind that comes with NXP's commitment to excellence.

Feature Benefit Bullets

Config: SINGLE

This single diode configuration simplifies circuit design and minimizes space requirements on PCBs, making it ideal for compact applications.

Surface Mount: YES

Surface mount compatibility allows for automated manufacturing processes and contributes to overall system reliability and performance.

Maximum Operating Temperature: 150 °C

The high operating temperature rating ensures reliability and performance in demanding thermal environments, allowing for better durability in varied applications.

Terminal Finish: Tin (Sn)

Tin finish provides good solderability and resistance to galvanic corrosion, enhancing the longevity and reliability of the connection.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component efficiently converts alternating current (AC) to direct current (DC), making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1 V

The low forward voltage drop minimizes energy loss during operation, improving overall efficiency and performance in circuit designs.

Maximum Output Current: 0.1 A

The capability to handle up to 0.1 A makes this diode suitable for a variety of low to moderate current applications, offering versatility in design.

Maximum Repetitive Peak Reverse Voltage: 35 V

A peak reverse voltage rating of 35 V allows this diode to withstand high voltage transients, ensuring that it can protect sensitive components in a circuit.

Technical Specifications

Diodes & Rectifiers BA277,335 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-609 Code:

e3

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Trade Compliance

BA277,335 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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