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BA277,135

NXP Semiconductors

BA277,135 by NXP Semiconductors

BA277,135 by NXP Semiconductors is a single rectifier diode designed for surface mount applications. It operates at a max temp of 150 °C, with a forward voltage of 1V and can handle up to 0.1A current. Ideal for power management in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,855 parts In-Stock

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Digiode

USA . 4,004 parts In-Stock

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4,004

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Anansix

USA . 2,855 parts In-Stock

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2,855

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One Stop Electronics

USA . 417 parts In-Stock

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$1.010

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417

$1.010

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AZTECH Wire

Italy . 441 parts In-Stock

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$19.560

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441

$19.560

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Component Stockers USA

USA . 416 parts In-Stock

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$99.990

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UNI Independent Distributors

Spain . 8,199 parts In-Stock

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Northwest PG Solutions

USA . 916 parts In-Stock

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$3.454

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Native Components

USA . 587 parts In-Stock

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Corphita

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Microchip USA

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Overview

Experience unparalleled reliability with the BA277,135 from NXP Semiconductors, a trusted leader in innovative electronic solutions. Designed for efficiency, this single rectifier diode excels under demanding conditions, making it ideal for automotive and industrial applications. Its robust performance ensures longevity while minimizing energy loss, delivering exceptional value to your projects. Choose NXP for quality you can depend on!

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to implement in various applications.

Surface Mount: YES

Surface mount capability allows for compact designs and automated assembly processes, enhancing manufacturing efficiency.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance in demanding environments, suitable for automotive and industrial applications.

Terminal Finish: Tin (Sn)

Tin plating provides excellent solderability and corrosion resistance, promoting durable and reliable connections.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed for converting alternating current (AC) to direct current (DC), making it ideal for power supply applications.

Maximum Forward Voltage (VF): 1 V

A low forward voltage drop enhances efficiency by reducing energy loss, making it a good choice for power-sensitive applications.

Maximum Output Current: 0.1 A

With a maximum output current of 0.1 A, it is suitable for low power applications while maintaining reliability.

Maximum Repetitive Peak Reverse Voltage: 35 V

A high peak reverse voltage rating ensures robustness in voltage spikes, protecting circuits from potential damage.

Technical Specifications

Diodes & Rectifiers BA277,135 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-609 Code:

e3

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.1 A

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Trade Compliance

BA277,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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