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NURS360BJ

NXP Semiconductors

NURS360BJ by NXP Semiconductors

NURS360BJ from NXP Semiconductors is a single rectifier diode designed for surface mount applications. It features a max reverse recovery time of 0.075 µs, operates at up to 175 °C, and handles currents up to 3 A with a peak reverse voltage of 600 V. Ideal for high-efficiency power management in electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,442 parts In-Stock

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Digiode

USA . 1,118 parts In-Stock

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1,118

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Anansix

USA . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,403 parts In-Stock

1+ parts

$2.010

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1,403

$2.010

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AZTECH Wire

Italy . 853 parts In-Stock

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$15.740

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853

$15.740

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UNI Independent Distributors

Spain . 4,835 parts In-Stock

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Corphita

USA . 3,282 parts In-Stock

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Overview

Unlock the potential of your designs with the NURS360BJ from NXP Semiconductors. This high-quality rectifier diode excels in efficiency and reliability, ensuring optimal performance in various applications like power supplies and automotive systems. With its compact surface mount design, it fits seamlessly into modern electronics, while handling extreme conditions with ease. Choose NXP for unparalleled quality and innovation—experience enhanced durability and trust in every circuit!

Feature Benefit Bullets

Configuration: SINGLE

The single configuration allows for simplicity in design and integration, making this diode easy to incorporate into various circuits.

Surface Mount: YES

Being surface mount enhances the diode's performance in high-density circuits, providing a compact solution that saves space on PCB.

Maximum Reverse Recovery Time: 0.075 us

This low reverse recovery time enables efficient switching performance, making it suitable for high-frequency applications.

Maximum Operating Temperature: 175 °C

With a high operating temperature rating, this diode is reliable in demanding thermal environments, ensuring durability and longevity.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting alternating current (AC) to direct current (DC), meeting essential power conversion needs.

Maximum Forward Voltage (VF): 1 V

A maximum forward voltage drop of 1 V indicates low conduction losses, enhancing the overall efficiency of the circuit.

Maximum Output Current: 3 A

The ability to handle 3 A of current makes this diode versatile, suitable for a wide range of applications requiring substantial current flow.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a high peak reverse voltage rating, this diode can safely handle significant voltage spikes, providing reliability in harsh electrical environments.

Maximum Non-Repetitive Peak Forward Current: 100 A

This capability to withstand high non-repetitive peak forward currents is advantageous for applications with transient current demands, ensuring robustness.

Technical Specifications

Diodes & Rectifiers NURS360BJ attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1 V

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Trade Compliance

NURS360BJ Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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