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NURS360B

NXP Semiconductors

NURS360B by NXP Semiconductors

NURS360B by NXP Semiconductors is a single rectifier diode designed for ultra-fast recovery power applications. It features a max reverse recovery time of 0.075 µs, operates at up to 175 °C, and supports peak reverse voltage of 600 V. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,377 parts In-Stock

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4,377

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Digiode

USA . 3,410 parts In-Stock

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3,410

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Anansix

USA . 91 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,624 parts In-Stock

1+ parts

$1.010

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$1.010

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UNI Independent Distributors

Spain . 5,786 parts In-Stock

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5,786

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Corphita

USA . 1,780 parts In-Stock

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1,780

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ChipstoGo Electronic ltd

UK . 91 parts In-Stock

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91

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Overview

Elevate your designs with the NURS360B from NXP Semiconductors, a premier choice in ultra-fast recovery power diodes. Crafted from high-quality materials and backed by a trusted manufacturer, this diode ensures unparalleled reliability and performance for your electronic applications. Enjoy the benefits of efficient energy management and robust thermal stability, making it ideal for everything from power supplies to automotive systems. Experience the difference NXP innovation can make!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection against environmental factors, making it reliable for various applications.

Config: SINGLE

A single configuration simplifies circuit design and reduces space, making it suitable for a wide range of electronic devices.

Surface Mount: YES

Surface mount capability allows for automated assembly and efficient use of board space, enhancing manufacturing processes.

Maximum Reverse Recovery Time: 0.075 µs

Ultra-fast recovery time minimizes switching losses, making it ideal for high-frequency applications.

Maximum Reverse Current: 2.5 µA

Low reverse current contributes to energy efficiency and reduces leakage, ensuring reliable operation over time.

Package Shape: RECTANGULAR

The rectangular shape allows for optimized layout on PCBs, facilitating better heat dissipation and compact designs.

No. of Terminals: 2

Two terminals simplify connections and help in reducing potential points of failure in the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline packaging promotes a compact footprint, which is essential for space-constrained applications.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery applications, it ensures enhanced performance in power conversion devices.

Maximum Operating Temperature: 175 °C

A high operating temperature range provides reliability in demanding environments, ensuring consistent functionality.

Terminal Position: DUAL

Dual terminal positioning allows for versatile mounting options, improving layout flexibility in designs.

Reference Standard: IEC-60134

Compliance with industry standards guarantees quality and performance, increasing user confidence in the product.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, essential for power supply applications.

Maximum Forward Voltage (VF): 1.25 V

A low forward voltage drop enhances efficiency and power handling, reducing heat generation.

Terminal Form: C BEND

The 'C bend' terminal form facilitates easy PCB mounting, enhancing assembly speed and reliability.

Maximum Repetitive Peak Reverse Voltage: 600 V

High peak reverse voltage rating enables usage in high-voltage applications, providing versatility across designs.

Maximum Non Repetitive Peak Forward Current: 110 A

The ability to handle high non-repetitive forward currents ensures robustness in demanding conditions.

Diode Element Material: SILICON

Silicon as the diode material ensures established performance and reliability, making it a industry standard.

Technical Specifications

Diodes & Rectifiers NURS360B attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Additional Features:

FREE WHEELING DIODE , LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

IEC-60134

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

2.5 uA

Maximum Reverse Recovery Time:

.075 us

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

NURS360B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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