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NUR460/L02,112

NXP Semiconductors

NUR460/L02,112 by NXP Semiconductors

NUR460/L02,112 from NXP Semiconductors is a single rectifier diode ideal for high-efficiency applications. It features a max reverse recovery time of 0.065 µs, operates at up to 150 °C, and supports currents up to 4 A with a peak voltage of 600 V. This diode is perfect for power management in various electronic devices.

Median Price

$0.185

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,131 parts In-Stock

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-

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$0.185

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$0.154

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$0.137

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$0.137

DigiKey

USA . 9,131 parts In-Stock

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$0.230

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Verical

USA . 9,000 parts In-Stock

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$0.171

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$0.171

Distributors (In-Stock)

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Digiode

USA . 4,092 parts In-Stock

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$0.144

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Vyrian

USA . 2,131 parts In-Stock

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Anansix

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475

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Distributors (Availability)

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Corphita

USA . 1,506 parts In-Stock

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$0.137

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Component Stockers USA

USA . 24,300 parts In-Stock

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$0.160

100+ parts

$0.150

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$0.130

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24,300

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AZTECH Wire

Italy . 341 parts In-Stock

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$12.370

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QUARKTWIN TECHNOLOGY LTD

USA . 24,255 parts In-Stock

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UNI Independent Distributors

Spain . 6,397 parts In-Stock

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Overview

Elevate your projects with the NUR460/L02,112 from NXP Semiconductors, where reliability meets innovation. This high-performance rectifier diode is engineered for exceptional quality and efficiency, ensuring long-lasting performance in demanding applications. Ideal for power management systems, it offers low forward voltage and rapid recovery times, giving you robust solutions that save energy and enhance productivity. Trust NXP's expertise to power your technology with unmatched value and reliability!

Feature Benefit Bullets

Configuration: SINGLE

A single configuration simplifies integration into circuits, making it easier to use in various applications.

Maximum Reverse Recovery Time: 0.065 us

This low reverse recovery time minimizes power loss during switching, enhancing efficiency in high-speed applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this diode can perform reliably in extreme environments, ensuring longevity and stability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it ideal for power supply and conversion applications.

Maximum Forward Voltage (VF): 1.05 V

A low forward voltage drop results in minimal energy loss, improving overall circuit efficiency.

Maximum Output Current: 4 A

The capability to handle up to 4 A allows this diode to support various load requirements, making it versatile for multiple applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high peak reverse voltage rating enables use in high-voltage applications, increasing its adaptability in different circuit designs.

Maximum Non-Repetitive Peak Forward Current: 110 A

The ability to handle peak currents up to 110 A makes it suitable for applications with high inrush currents, enhancing reliability.

Technical Specifications

Diodes & Rectifiers NUR460/L02,112 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

4 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.065 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

NUR460/L02,112 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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