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NUR460/L03,112

NXP Semiconductors

NUR460/L03,112 by NXP Semiconductors

NUR460/L03,112 by NXP Semiconductors is a single rectifier diode ideal for high-efficiency applications. It features a max reverse recovery time of 0.065 µs, operates at up to 150 °C, and supports currents up to 4 A with a peak reverse voltage of 600 V. This diode is perfect for power management in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,141 parts In-Stock

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4,141

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Digiode

USA . 4,131 parts In-Stock

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4,131

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Anansix

USA . 650 parts In-Stock

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650

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 524 parts In-Stock

1+ parts

$2.010

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524

$2.010

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UNI Independent Distributors

Spain . 6,809 parts In-Stock

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6,809

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Corphita

USA . 3,667 parts In-Stock

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3,667

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Overview

Unlock unparalleled performance with the NUR460/L03,112 from NXP Semiconductors—a trusted leader in innovative solutions. This high-quality rectifier diode excels in demanding applications, boasting efficiency and reliability that enhance your designs. With superior thermal management and robust durability, it ensures long-lasting performance, giving you peace of mind and optimal value in every project. Elevate your technology with NXP’s commitment to excellence!

Feature Benefit Bullets

Config: SINGLE

The single configuration simplifies circuit design, making it easy to integrate into various applications.

Maximum Reverse Recovery Time: 0.065 us

A low reverse recovery time enhances switching performance, making the diode ideal for high-frequency applications.

Maximum Operating Temperature: 150 °C

High operating temperature capability ensures reliable performance in demanding environments and extended lifespan.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification, this diode efficiently converts AC to DC, suitable for power supply circuits.

Maximum Forward Voltage (VF): 1.05 V

A low forward voltage drop minimizes power loss during operation, improving overall energy efficiency of the system.

Maximum Output Current: 4 A

With a 4 A output current rating, this diode can handle significant load currents, making it versatile for various applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high peak reverse voltage rating allows for use in high-voltage applications, enhancing circuit reliability and component safety.

Maximum Non-Repetitive Peak Forward Current: 110 A

The ability to withstand high non-repetitive current pulses makes this diode suitable for surge protection and brief overload situations.

Technical Specifications

Diodes & Rectifiers NUR460/L03,112 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

4 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.065 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

NUR460/L03,112 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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