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NUR460/L04,112

NXP Semiconductors

NUR460/L04,112 by NXP Semiconductors

NUR460/L04,112 from NXP Semiconductors is a single rectifier diode ideal for high-efficiency applications. It features a max reverse recovery time of 0.065 µs, operates at up to 150 °C, and supports 600 V peak reverse voltage. This diode is perfect for power management in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,970 parts In-Stock

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1,970

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Digiode

USA . 1,839 parts In-Stock

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1,839

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Anansix

USA . 535 parts In-Stock

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535

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Distributors (Availability)

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One Stop Electronics

USA . 1,327 parts In-Stock

1+ parts

$3.010

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1,327

$3.010

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QUARKTWIN TECHNOLOGY LTD

USA . 17,666 parts In-Stock

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17,666

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UNI Independent Distributors

Spain . 6,318 parts In-Stock

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6,318

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Microchip USA

USA . 5,470 parts In-Stock

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Corphita

USA . 2,700 parts In-Stock

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2,700

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Overview

Elevate your designs with the NUR460/L04,112 from NXP Semiconductors—a trusted name in quality and innovation. This remarkable rectifier diode excels in efficiency and reliability, making it perfect for a wide range of applications from power management to automotive systems. With its impressive performance under extreme conditions, you benefit from enhanced durability and lower energy consumption, ensuring your projects stand out while maximizing value. Experience excellence with NXP today!

Feature Benefit Bullets

Configuration: SINGLE

This single configuration makes the diode easy to integrate into various circuit designs, providing simplicity and reliability for users.

Maximum Reverse Recovery Time: 0.065 us

The low reverse recovery time ensures the diode can switch quickly and efficiently, reducing power losses and improving overall circuit performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can function effectively in demanding environments, enhancing durability and reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed for converting AC to DC, making it suitable for a wide range of power supply applications.

Maximum Forward Voltage (VF): 1.05 V

A low forward voltage drop minimizes energy loss, improving the efficiency of the circuit and ensuring optimal performance in applications.

Maximum Output Current: 4 A

With a maximum output current of 4 A, this diode can handle significant load currents, making it versatile for various high-power applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high peak reverse voltage rating provides excellent capability to withstand voltage spikes, protecting the circuit from transient voltages and increasing reliability.

Maximum Non-Repetitive Peak Forward Current: 110 A

The ability to handle high non-repetitive peak forward current makes this diode suitable for high surge current applications, ensuring robust performance during transient conditions.

Technical Specifications

Diodes & Rectifiers NUR460/L04,112 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

4 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.065 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

NUR460/L04,112 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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