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NUR460P,133

NXP Semiconductors

NUR460P,133 by NXP Semiconductors

NUR460P,133 from NXP Semiconductors is a single rectifier diode ideal for high-efficiency applications. It features a max reverse recovery time of 0.075 µs, operates up to 175 °C, and handles peak reverse voltages of 600 V. Perfect for power management in electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,427 parts In-Stock

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Vyrian

USA . 1,651 parts In-Stock

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Anansix

USA . 272 parts In-Stock

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One Stop Electronics

USA . 1,462 parts In-Stock

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$2.010

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Perfect Parts

USA . 29,120 parts In-Stock

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UNI Independent Distributors

Spain . 6,049 parts In-Stock

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Corphita

USA . 2,509 parts In-Stock

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Overview

Elevate your designs with the NUR460P,133 from NXP Semiconductors—a premier choice in diodes and rectifiers. Engineered for reliability and performance, this single rectifier diode excels in demanding environments, boasting a high reverse voltage and robust thermal characteristics. Trust in NXP’s industry expertise to enhance your applications with unmatched efficiency, ensuring long-lasting durability and superior power management for all your electronic needs.

Feature Benefit Bullets

Config: SINGLE

The single configuration simplifies application design and integration, making it ideal for various circuits.

Maximum Reverse Recovery Time: 0.075 µs

A low reverse recovery time enhances efficiency and reduces switching losses, which is crucial for high-frequency applications.

Maximum Operating Temperature: 175 °C

This high operating temperature allows for reliable performance in harsh environments, increasing the product's versatility.

Terminal Finish: TIN

The tin finish ensures good solderability and reliability in assembly processes, contributing to enhanced durability.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum reflow time of 30 seconds ensures that the diode can withstand soldering processes without compromising performance.

Peak Reflow Temperature: 245 °C

With a high peak reflow temperature, this diode can be used in various assembly techniques, enhancing design flexibility.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.05 V

The low forward voltage drop contributes to energy efficiency in power applications, minimizing heat generation.

Maximum Output Current: 4 A

A maximum output current of 4 A supports a wide range of application requirements, providing flexibility for design engineers.

Maximum Repetitive Peak Reverse Voltage: 600 V

This high reverse voltage rating allows the diode to handle significant voltage spikes, ensuring reliability in demanding conditions.

Maximum Non-Repetitive Peak Forward Current: 110 A

This capability to tolerate high peak forward currents enables the diode to manage transients effectively, enhancing its robustness in circuits.

Technical Specifications

Diodes & Rectifiers NUR460P,133 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Peak Reflow Temperature (C):

245

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NUR460P,133 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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