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NUR460P/L03U

NXP Semiconductors

NUR460P/L03U by NXP Semiconductors

NUR460P/L03U from NXP Semiconductors is a single rectifier diode ideal for high-temperature applications, with a max operating temp of 175 °C. It features a reverse recovery time of just 0.075 µs and supports up to 600 V peak reverse voltage. This diode efficiently handles currents up to 4 A, making it suitable for power management in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,227 parts In-Stock

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Digiode

USA . 3,653 parts In-Stock

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3,653

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Anansix

USA . 1,467 parts In-Stock

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1,467

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Distributors (Availability)

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One Stop Electronics

USA . 1,037 parts In-Stock

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$0.010

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$0.010

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$0.157

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$0.143

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$0.129

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2,500

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QUARKTWIN TECHNOLOGY LTD

USA . 15,746 parts In-Stock

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UNI Independent Distributors

Spain . 5,690 parts In-Stock

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Corphita

USA . 3,806 parts In-Stock

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Overview

Unlock the power of reliability with NXP Semiconductors' NUR460P/L03U rectifier diode. Designed for superior performance, this single diode excels in high-temperature environments and delivers exceptional efficiency, making it ideal for a wide range of applications—from industrial machinery to consumer electronics. With NXP's renowned commitment to quality and innovation, you can trust that this diode not only meets but exceeds your expectations, enhancing your projects with unmatched durability and effectiveness.

Feature Benefit Bullets

Config: SINGLE

The single configuration simplifies circuit design and integration, making it a versatile choice for various applications.

Maximum Reverse Recovery Time: 0.075 us

A low reverse recovery time ensures efficient switching and minimizes power loss, making it suitable for high-frequency applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can function reliably in demanding environments, enhancing durability and longevity.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is ideal for converting alternating current (AC) to direct current (DC) in power supply circuits.

Maximum Forward Voltage (VF): 1.05 V

A low forward voltage drop translates to higher efficiency in circuits, reducing energy losses during operation.

Maximum Output Current: 4 A

With a maximum output current of 4 A, this diode can handle substantial current loads, making it suitable for a variety of power applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

Capable of withstanding high voltages, this diode is perfect for applications requiring reliable performance in harsh electrical environments.

Maximum Non Repetitive Peak Forward Current: 110 A

High non-repetitive peak forward current capability allows it to handle transient loads, offering robustness in circuit protection.

Technical Specifications

Diodes & Rectifiers NUR460P/L03U attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

NUR460P/L03U Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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