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NUR460P/L01U

NXP Semiconductors

NUR460P/L01U by NXP Semiconductors

NUR460P/L01U from NXP Semiconductors is a single rectifier diode ideal for high-temperature applications, with a max operating temp of 175 °C. It features a reverse recovery time of just 0.075 µs and supports up to 600 V peak reverse voltage. This diode efficiently handles currents up to 4 A, making it suitable for power management in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,935 parts In-Stock

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1,935

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Digiode

USA . 1,218 parts In-Stock

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1,218

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Anansix

USA . 175 parts In-Stock

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175

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 294 parts In-Stock

1+ parts

$2.010

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294

$2.010

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Component Stockers USA

USA . 722 parts In-Stock

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$99.990

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722

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Corphita

USA . 4,890 parts In-Stock

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UNI Independent Distributors

Spain . 3,605 parts In-Stock

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Overview

Unlock unparalleled performance with the NUR460P/L01U from NXP Semiconductors, a leader in innovative technology. This high-quality rectifier diode delivers exceptional efficiency and reliability, making it perfect for demanding applications. With its robust design, it excels in extreme conditions, ensuring long-lasting operation and superior thermal management. Experience enhanced productivity and peace of mind—choose NXP for unmatched quality and performance in your next project!

Feature Benefit Bullets

Config: SINGLE

The SINGLE configuration simplifies circuit design, making it an efficient choice for various applications.

Maximum Reverse Recovery Time: 0.075 us

A low reverse recovery time enhances the efficiency of high-frequency switching applications, reducing power losses.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this diode can function reliably in harsh environments, ensuring durability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed for converting AC to DC, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.05 V

A low forward voltage drop minimizes energy loss during operation, contributing to overall efficiency.

Maximum Output Current: 4 A

The ability to handle a maximum output current of 4 A makes it suitable for a wide range of consumer and industrial applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a peak reverse voltage rating of 600 V, it can handle high voltage applications, adding to its versatility.

Maximum Non Repetitive Peak Forward Current: 110 A

This high non-repetitive peak forward current allows for inrush currents during startup, making it ideal for power supply circuits.

Technical Specifications

Diodes & Rectifiers NUR460P/L01U attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

NUR460P/L01U Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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