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NUR460P/L02U

NXP Semiconductors

NUR460P/L02U by NXP Semiconductors

NUR460P/L02U from NXP Semiconductors is a single rectifier diode ideal for high-temperature applications, with a max operating temp of 175 °C. It features a reverse recovery time of just 0.075 µs and supports up to 600 V peak reverse voltage. This diode efficiently handles currents up to 4 A, making it suitable for power management in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,396 parts In-Stock

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Vyrian

USA . 1,208 parts In-Stock

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Anansix

USA . 261 parts In-Stock

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One Stop Electronics

USA . 927 parts In-Stock

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$0.010

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927

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Ampacity Inc.

Singapore . 426 parts In-Stock

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$3.010

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UNI Independent Distributors

Spain . 6,422 parts In-Stock

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Corphita

USA . 3,130 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,075 parts In-Stock

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Overview

Unlock unparalleled performance with the NUR460P/L02U from NXP Semiconductors—a leader in innovative solutions. This robust rectifier diode excels in high-temperature environments and delivers reliable efficiency, making it ideal for power supplies, renewable energy systems, and industrial applications. With its exceptional quality and reliability, this diode ensures maximum uptime, allowing you to achieve your project goals with confidence and precision. Experience the NXP advantage today!

Feature Benefit Bullets

Config: SINGLE

The single configuration allows for a straightforward application, making installation and integration easier in various circuits.

Maximum Reverse Recovery Time: 0.075 us

The low reverse recovery time enhances switching efficiency, making this diode suitable for high-frequency applications.

Maximum Operating Temperature: 175 °C

With a high operating temperature rating, this diode is ideal for use in harsh environments and high-temperature applications.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it is designed for efficiency in converting alternating current (AC) to direct current (DC), making it versatile for a variety of applications.

Maximum Forward Voltage (VF): 1.05 V

The low forward voltage drop ensures minimal power loss, improving overall circuit efficiency and thermal performance.

Maximum Output Current: 4 A

With a rated output current of 4 A, this diode can handle significant load currents, suitable for various power applications.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high peak reverse voltage capability ensures reliability and robustness in applications where voltage spikes may occur.

Maximum Non-Repetitive Peak Forward Current: 110 A

The ability to handle high non-repetitive forward currents makes this diode suitable for pulse applications and provides added durability.

Technical Specifications

Diodes & Rectifiers NUR460P/L02U attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

NUR460P/L02U Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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