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BAS16W,135

NXP Semiconductors

BAS16W,135 by NXP Semiconductors

BAS16W,135 by NXP Semiconductors is a single rectifier diode with a max output current of 0.175A and a max repetitive peak reverse voltage of 100V. It has a small outline package style, operates b/w -65°C to 150°C, and features a fast reverse recovery time of 0.004 us. Ideal for applications requiring high-speed switching in compact electronic devices.

Median Price

$0.010

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,020,000 parts In-Stock

1+ parts

$0.010

100+ parts

$0.010

1k+ parts

$0.010

10k+ parts

-

1,020,000

$0.010

$0.010

$0.010

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,139 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

-

10k+ parts

-

3,139

$0.022

-

-

-

Vyrian

USA . 9,379 parts In-Stock

1+ parts

-

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9,379

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Anansix

USA . 2,888 parts In-Stock

1+ parts

-

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1k+ parts

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2,888

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,346 parts In-Stock

1+ parts

$0.021

100+ parts

-

1k+ parts

-

10k+ parts

-

2,346

$0.021

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-

-

Native Components

USA . 900 parts In-Stock

1+ parts

$0.219

100+ parts

-

1k+ parts

-

10k+ parts

$0.210

900

$0.219

-

-

$0.210

Northwest PG Solutions

USA . 231 parts In-Stock

1+ parts

$0.241

100+ parts

-

1k+ parts

-

10k+ parts

$0.212

231

$0.241

-

-

$0.212

AZTECH Wire

Italy . 590 parts In-Stock

1+ parts

$14.270

100+ parts

-

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590

$14.270

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Continental Prestige Electronics

USA . 1,020,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.015

1,020,000

-

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$0.015

UNI Independent Distributors

Spain . 5,317 parts In-Stock

1+ parts

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100+ parts

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5,317

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Overview

Elevate your electronic designs with the BAS16W,135 by NXP Semiconductors. Crafted with precision and expertise, this diode offers unparalleled quality and reliability. Ideal for a wide range of applications, this rectifier diode is a game-changer in the world of electronics. Experience the benefits of fast recovery time, high power dissipation, and exceptional performance in a compact package. Trust NXP Semiconductors to deliver cutting-edge technology that exceeds your expectations. Make the BAS16W,135 a key component in your next project and witness the difference it can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the diode, making it suitable for a wide range of applications.

Config: SINGLE

Simplifies circuit design and installation by only requiring one diode.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and simplifying manufacturing processes.

Maximum Reverse Recovery Time: 0.004 us

Ensures fast switching speeds and efficient operation of the diode.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting in a circuit.

No. of Terminals: 3

Provides flexibility in connection options for various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Compact design saves space in the circuit and allows for high-density mounting.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating conditions.

Minimum Operating Temperature: -65 °C

Can operate in extremely low temperatures, increasing its versatility.

Terminal Position: DUAL

Provides multiple connection points for flexible circuit integration.

Maximum Power Dissipation: 0.2 W

Efficiently handles power dissipation to prevent overheating and ensure reliable performance.

Reference Standard: IEC-60134

Compliance with an industry standard ensures quality and reliability of the diode.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying AC to DC current, making it ideal for power supply applications.

Maximum Output Current: 0.175 A

Capable of handling moderate current flows, suitable for a variety of circuit requirements.

Terminal Form: GULL WING

Facilitates easy soldering and mounting on PCBs, ensuring reliable connections.

Maximum Repetitive Peak Reverse Voltage: 100 V

Withstands high reverse voltages, making it suitable for rectification and protection circuits.

Diode Element Material: SILICON

Silicon diodes are known for their high efficiency and reliability in electronic circuits.

Technical Specifications

Diodes & Rectifiers BAS16W,135 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.175 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Reference Standard:

IEC-60134

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.004 us

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

BAS16W,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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