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BY329-1200,127

NXP Semiconductors

BY329-1200,127 by NXP Semiconductors

BY329-1200,127 from NXP Semiconductors is a single rectifier diode ideal for high-voltage applications. It features a max reverse recovery time of 0.135 µs, operates at up to 150 °C, and supports currents up to 8 A with a peak reverse voltage of 1200 V. This diode is perfect for power supply circuits and motor control systems.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

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Digiode

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Anansix

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One Stop Electronics

USA . 373 parts In-Stock

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AZTECH Wire

Italy . 451 parts In-Stock

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Corphita

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Northwest PG Solutions

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Microchip USA

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Overview

Elevate your projects with the BY329-1200,127 from NXP Semiconductors—the epitome of reliability in diodes and rectifiers. Designed for demanding applications, this high-performance rectifier diode ensures efficient power management while boasting a robust operating range. With NXP’s renowned quality, you’re guaranteed longevity and superior performance, making it the perfect choice for automotive, industrial, and consumer electronics. Unlock exceptional value and peace of mind with every connection!

Feature Benefit Bullets

Config: SINGLE

The single configuration ensures simplicity in design and integration, making this diode an excellent choice for straightforward applications.

Maximum Reverse Recovery Time: 0.135 µs

A fast reverse recovery time enhances switching performance, making this diode suitable for high-efficiency applications.

Maximum Operating Temperature: 150 °C

The high operating temperature allows for reliable performance in demanding environments, increasing the longevity of the product.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides excellent solderability and corrosion resistance, ensuring robust connections in various applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is ideal for converting AC to DC, making it a vital component in power supply systems.

Maximum Forward Voltage (VF): 1.8 V

A low forward voltage drop leads to improved efficiency and reduced power losses in circuits, making it energy-efficient for diverse applications.

Maximum Output Current: 8 A

With a high output current rating, this diode can handle significant loads, making it suitable for both consumer and industrial applications.

Maximum Repetitive Peak Reverse Voltage: 1200 V

A high reverse voltage rating protects against voltage spikes, ensuring circuit reliability and safe operation in high-voltage conditions.

Maximum Non Repetitive Peak Forward Current: 80 A

This high forward current capability allows the diode to handle surge conditions effectively, protecting sensitive components in the system.

Technical Specifications

Diodes & Rectifiers BY329-1200,127 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

8 A

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Recovery Time:

.135 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

BY329-1200,127 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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