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BY329-1000,127

NXP Semiconductors

BY329-1000,127 by NXP Semiconductors

BY329-1000,127 from NXP Semiconductors is a single rectifier diode ideal for high-voltage applications. It features a max reverse recovery time of 0.15 µs, operates at up to 150 °C, and supports currents up to 8 A with a peak reverse voltage of 1000 V. This diode is perfect for power supply circuits and energy conversion systems.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

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Digiode

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Anansix

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One Stop Electronics

USA . 1,601 parts In-Stock

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AZTECH Wire

Italy . 482 parts In-Stock

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Microchip USA

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UNI Independent Distributors

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Northwest PG Solutions

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Overview

Unlock the power of reliability with the BY329-1000,127 from NXP Semiconductors. Designed for high-performance applications, this single rectifier diode delivers exceptional durability and efficiency, handling up to 1000V while maintaining a compact footprint. With NXP’s industry-leading quality assurance, you can trust in robust operation even in extreme conditions. Elevate your projects with enhanced energy management and unwavering performance—experience the NXP advantage today!

Feature Benefit Bullets

Configuration: SINGLE

The single configuration simplifies circuit design, making the diode easier to integrate into various applications.

Maximum Reverse Recovery Time: 0.15 us

A low reverse recovery time enhances efficiency, reduces switching losses, and improves overall performance in high-frequency applications.

Maximum Operating Temperature: 150 °C

Withstanding high temperatures ensures reliability and stability in demanding environments, making it suitable for industrial applications.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides excellent solderability, improving assembly processes and ensuring durable connections.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it's optimized for converting alternating current (AC) to direct current (DC), essential for power supply applications.

Maximum Forward Voltage (VF): 1.8 V

A relatively low forward voltage drop contributes to higher efficiency, reducing energy losses during operation.

Maximum Output Current: 8 A

A maximum output current of 8 A makes this diode suitable for a wide range of power applications without compromising performance.

Maximum Repetitive Peak Reverse Voltage: 1000 V

High reverse voltage capability allows for use in high-voltage applications, enhancing flexibility across various circuit designs.

Maximum Non-Repetitive Peak Forward Current: 80 A

The ability to handle high peak forward currents ensures robustness in surges or transient conditions, protecting devices in critical applications.

Technical Specifications

Diodes & Rectifiers BY329-1000,127 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

8 A

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Recovery Time:

.15 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

BY329-1000,127 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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