Loading...

NXP Semiconductors Diodes & Rectifiers 78

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
BY359X-1500S,127 by NXP Semiconductors

BY359X-1500S,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

HIGH VOLTAGE FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.75 V

R-PSFM-T2

e3

66 A

1

1

2

150 Cel

7 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1500 V

.35 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BY459X-1500,127 by NXP Semiconductors

BY459X-1500,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

HIGH VOLTAGE FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

TO-220AC

R-PSFM-T2

e3

110 A

1

1

2

150 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1500 V

.35 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BYD17D,115 by NXP Semiconductors

BYD17D,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

225 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

200 V

1 uA

3 us

200 V

YES

AVALANCHE

WRAP AROUND

END

BYD17G,115 by NXP Semiconductors

BYD17G,115

NXP Semiconductors

BYD17G,115 by NXP Semiconductors is a single rectifier diode with a max reverse recovery time of 3 us and a max reverse current of 1 uA. It has a package shape of round and can handle a max reverse test voltage of 400 V. This diode is suitable for applications requiring high efficiency and low forward voltage drop in electronic circuits.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

450 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

400 V

1 uA

3 us

400 V

YES

AVALANCHE

WRAP AROUND

END

BYD17J,115 by NXP Semiconductors

BYD17J,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

650 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

600 V

1 uA

3 us

600 V

YES

AVALANCHE

WRAP AROUND

END

BYD17K,135 by NXP Semiconductors

BYD17K,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

800 V

3 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYD37M,115 by NXP Semiconductors

BYD37M,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

FAST SOFT RECOVERY

1100 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

1000 V

1 uA

.3 us

1000 V

YES

AVALANCHE

WRAP AROUND

END

BYD77B,115 by NXP Semiconductors

BYD77B,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

.85 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

100 V

.025 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYD77D,115 by NXP Semiconductors

BYD77D,115

NXP Semiconductors

BYD77D,115 by NXP Semiconductors is a single rectifier diode with a max output current of 0.85A and a max repetitive peak reverse voltage of 200V. It has a fast max reverse recovery time of 0.025us, making it suitable for applications requiring high-speed switching such as power supplies and inverters. The diode's technology is avalanche-based, ensuring efficient performance even at an operating temperature of up to 175°C.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

.85 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

200 V

.025 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYM357X,127 by NXP Semiconductors

BYM357X,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Surface Mount: NO; Package Shape: RECTANGULAR;

HIGH VOLTAGE SOFT RECOVERY

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.45 V

R-PSFM-T3

e3

66 A

2

1

3

150 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1500 V

.3 us

Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

BYM358X,127 by NXP Semiconductors

BYM358X,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Surface Mount: NO; Package Shape: RECTANGULAR;

ULTRA FAST SOFT RECOVERY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.6 V

R-PSFM-T3

e3

77 A

1

1

3

150 Cel

7 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1500 V

.17 us

Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

BYM359X-1500,127 by NXP Semiconductors

BYM359X-1500,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Surface Mount: NO; Package Shape: RECTANGULAR;

HIGH VOLTAGE FAST SOFT RECOVERY

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.55 V

R-PSFM-T3

e3

NOT APPLICABLE

66 A

2

1

3

150 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

600 V

.145 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

NOT SPECIFIED

PRLL4001,115 by NXP Semiconductors

PRLL4001,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

.68 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

50 V

YES

WRAP AROUND

END

NOT SPECIFIED

BYC20X-600P,127 by NXP Semiconductors

BYC20X-600P,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

LOW LEAKAGE CURRENT

HYPER FAST RECOVERY POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

2.5 V

TO-220AC

R-PSFM-T2

220 A

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

IEC-60134

600 V

10 uA

.035 us

NO

THROUGH-HOLE

SINGLE

BYC5-600P,127 by NXP Semiconductors

BYC5-600P,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

LOW LEAKAGE CURRENT

HYPER FAST RECOVERY POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

3.3 V

TO-220AC

R-PSFM-T2

65 A

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

IEC-60134

600 V

10 uA

.025 us

NO

THROUGH-HOLE

SINGLE

BYC8B-600P,118 by NXP Semiconductors

BYC8B-600P,118

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW LEAKAGE CURRENT

HYPER FAST RECOVERY POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

3.4 V

R-PSSO-G2

100 A

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

IEC-60134

600 V

20 uA

.018 us

YES

GULL WING

SINGLE

BYV10-600P,127 by NXP Semiconductors

BYV10-600P,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

LOW LEAKAGE CURRENT

ULTRA FAST SOFT RECOVERY POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

2 V

TO-220AC

R-PSFM-T2

88 A

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

IEC-60134

600 V

10 uA

.05 us

NO

THROUGH-HOLE

SINGLE

BYV10EX-600P,127 by NXP Semiconductors

BYV10EX-600P,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

LOW LEAKAGE CURRENT

ULTRA FAST SOFT RECOVERY POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

2 V

TO-220AC

R-PSFM-T2

83 A

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

IEC-60134

600 V

10 uA

.05 us

NO

AVALANCHE

THROUGH-HOLE

SINGLE

NUR460P/L02,112 by NXP Semiconductors

NUR460P/L02,112

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW LEAKAGE CURRENT

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

DO-201AD

O-PALF-W2

110 A

1

1

2

175 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

IEC-60134

600 V

10 uA

.075 us

NO

WIRE

AXIAL

NUR460P/L07,112 by NXP Semiconductors

NUR460P/L07,112

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW LEAKAGE CURRENT

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

DO-201AD

O-PALF-W2

110 A

1

1

2

175 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

IEC-60134

600 V

10 uA

.075 us

NO

WIRE

AXIAL

PMEG045V050EPD,139 by NXP Semiconductors

PMEG045V050EPD,139

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.49 V

R-PDSO-F3

160 A

1

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

1.66 W

AEC-Q101; IEC-60134

45 V

300 uA

.012 us

YES

SCHOTTKY

FLAT

DUAL

PMEG050V150EPD,139 by NXP Semiconductors

PMEG050V150EPD,139

NXP Semiconductors

PMEG050V150EPD,139 by NXP Semiconductors is a single Schottky rectifier diode with a max forward voltage of 0.5V and a max repetitive peak reverse voltage of 50V. It is designed for efficiency applications, operates b/w -55 to 150°C, and has a package style of small outline for surface mount assembly.

FREE WHEELING DIODE

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.5 V

R-PDSO-F3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.78 W

AEC-Q101; IEC-60134

50 V

1000 uA

YES

SCHOTTKY

FLAT

DUAL

PMEG45A10EPD,146 by NXP Semiconductors

PMEG45A10EPD,146

NXP Semiconductors

PMEG45A10EPD,146 by NXP Semiconductors is a Schottky rectifier diode with a max forward voltage of 0.54V and a max reverse recovery time of 0.013us. It has a max power dissipation of 0.9W and is designed for efficiency applications in electronics, with an operating temperature range from -55°C to 150°C.

FREE WHEELING DIODE

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.54 V

R-PDSO-F3

170 A

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.9 W

IEC-60134

45 V

500 uA

.013 us

YES

SCHOTTKY

FLAT

DUAL

PMEG45T15EPD,139 by NXP Semiconductors

PMEG45T15EPD,139

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.58 V

R-PDSO-F3

210 A

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

1.4 W

IEC-60134

45 V

100 uA

.06 us

YES

SCHOTTKY

FLAT

DUAL

PMEG45U10EPD,146 by NXP Semiconductors

PMEG45U10EPD,146

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.49 V

R-PDSO-F3

180 A

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

1.4 W

IEC-60134

45 V

600 uA

.016 us

YES

SCHOTTKY

FLAT

DUAL

1PS76SB21,145 by NXP Semiconductors

1PS76SB21,145

NXP Semiconductors

1PS76SB21,145 by NXP Semiconductors is a Schottky rectifier diode with a max output current of 0.2A and operating temperature of 125°C. It comes in a small outline package shape, suitable for surface mount applications in various electronic circuits.

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-G2

1

1

2

125 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

SCHOTTKY

GULL WING

DUAL

PMEG3010AESB,314 by NXP Semiconductors

PMEG3010AESB,314

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

RECTIFIER DIODE

R-PBCC-N2

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.525 W

IEC-60134

30 V

.0035 us

YES

SCHOTTKY

NO LEAD

BOTTOM

PMEG1201AESF,315 by NXP Semiconductors

PMEG1201AESF,315

NXP Semiconductors

PMEG1201AESF,315 by NXP Semiconductors is a single Schottky rectifier diode with a max reverse recovery time of 0.0022 us and max forward voltage of 0.25 V. It is designed for efficiency applications, operating b/w -55 to 125 °C, with a package style of chip carrier.

EFFICIENCY

12 V

SINGLE

SILICON

RECTIFIER DIODE

.25 V

R-PBCC-N2

4 A

1

1

2

125 Cel

-55 Cel

.1 A

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.325 W

IEC-60134

12 V

2000 uA

.0022 us

12 V

YES

SCHOTTKY

NO LEAD

BOTTOM

PMEG2005AESF,315 by NXP Semiconductors

PMEG2005AESF,315

NXP Semiconductors

PMEG2005AESF,315 by NXP Semiconductors is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 0.5A. It has a reverse test voltage of 20V and operates efficiently at temperatures ranging from -55 to 150°C. This diode is ideal for applications requiring high efficiency and low power dissipation in electronic circuits.

EFFICIENCY

20 V

SINGLE

SILICON

RECTIFIER DIODE

.55 V

R-PBCC-N2

4.5 A

1

1

2

150 Cel

-55 Cel

.5 A

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.405 W

IEC-60134

20 V

45 uA

.0019 us

20 V

YES

SCHOTTKY

NO LEAD

BOTTOM

PMEG3010ESB,315 by NXP Semiconductors

PMEG3010ESB,315

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

30 V

SINGLE

SILICON

RECTIFIER DIODE

.565 V

R-PBCC-N2

10 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

.525 W

IEC-60134

30 V

45 uA

.0032 us

30 V

YES

SCHOTTKY

NO LEAD

BOTTOM