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BYD17G,115

NXP Semiconductors

BYD17G,115 by NXP Semiconductors

BYD17G,115 by NXP Semiconductors is a single rectifier diode with a max reverse recovery time of 3 us and a max reverse current of 1 uA. It has a package shape of round and can handle a max reverse test voltage of 400 V. This diode is suitable for applications requiring high efficiency and low forward voltage drop in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 27,420 parts In-Stock

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Vyrian

USA . 4,348 parts In-Stock

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Digiode

USA . 3,873 parts In-Stock

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Anansix

USA . 2,424 parts In-Stock

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Nova Conductors

Japan . 73 parts In-Stock

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Corohmni

South Africa . 36 parts In-Stock

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$0.062

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Aztec Data Supply Inc.

USA . 52,200 parts In-Stock

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$0.098

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One Stop Electronics

USA . 570 parts In-Stock

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$2.010

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570

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Ampacity Inc.

Singapore . 459 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 268 parts In-Stock

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$13.306

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Corphita

USA . 3,650 parts In-Stock

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Argo Parts USA

USA . 1,783 parts In-Stock

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UNI Independent Distributors

Spain . 1,205 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Microchip USA

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Continental Prestige Electronics

USA . 352 parts In-Stock

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Overview

Elevate your electronic designs with the NXP Semiconductors BYD17G,115 diode rectifier. Crafted with precision and expertise, this single-configured diode offers unparalleled quality and reliability. Ideal for a wide range of applications, this diode is designed to provide maximum performance in demanding environments. Trust in NXP Semiconductors to deliver cutting-edge technology that exceeds expectations. Choose the BYD17G,115 for superior efficiency, durability, and value in your next project.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package provides excellent protection for the diode, ensuring durability and reliability in various operating conditions.

Maximum Reverse Recovery Time: 3 us

Fast reverse recovery time ensures efficient operation and reduced switching losses in high-speed applications.

Maximum Reverse Current: 1 uA

Low reverse current minimizes power losses and improves overall efficiency of the diode.

Minimum Breakdown Voltage: 450 V

High breakdown voltage ensures the diode can withstand high voltages, making it suitable for a wide range of applications.

Technology: AVALANCHE

Avalanche technology allows the diode to handle high voltages and currents without breakdown, ensuring reliable performance in demanding conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode design is ideal for converting alternating current (AC) to direct current (DC), making it suitable for power supply and rectification applications.

Technical Specifications

Diodes & Rectifiers BYD17G,115 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

GENERAL PURPOSE

Minimum Breakdown Voltage:

450 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

O-LELF-R2

Maximum Non Repetitive Peak Forward Current:

20 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.6 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Reference Standard:

IEC-134

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

1 uA

Maximum Reverse Recovery Time:

3 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

END

Trade Compliance

BYD17G,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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