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BYD77D,115

NXP Semiconductors

BYD77D,115 by NXP Semiconductors

BYD77D,115 by NXP Semiconductors is a single rectifier diode with a max output current of 0.85A and a max repetitive peak reverse voltage of 200V. It has a fast max reverse recovery time of 0.025us, making it suitable for applications requiring high-speed switching such as power supplies and inverters. The diode's technology is avalanche-based, ensuring efficient performance even at an operating temperature of up to 175°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 17,260 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 11,225 parts In-Stock

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VNN

France . 3,362 parts In-Stock

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Vyrian

USA . 2,057 parts In-Stock

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Digiode

USA . 1,207 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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Anansix

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One Stop Electronics

USA . 989 parts In-Stock

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$0.010

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.043

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$0.041

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Aztec Data Supply Inc.

USA . 28,604 parts In-Stock

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$0.060

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Corohmni

South Africa . 456 parts In-Stock

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Semicontronic

India . 618 parts In-Stock

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Ampacity Inc.

Singapore . 372 parts In-Stock

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AZTECH Wire

Italy . 723 parts In-Stock

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Perfect Parts

USA . 4,480 parts In-Stock

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Argo Parts USA

USA . 4,198 parts In-Stock

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Continental Prestige Electronics

USA . 3,516 parts In-Stock

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GreenTree Electronics

Israel . 2,066 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Microchip USA

USA . 446 parts In-Stock

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UNI Independent Distributors

Spain . 396 parts In-Stock

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Corphita

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Overview

Unleash the power of cutting-edge technology with the BYD77D,115 diode by NXP Semiconductors. Crafted with precision and expertise, this diode offers unparalleled performance and reliability in a sleek glass package. Ideal for a wide range of applications, this rectifier diode boasts a quick reverse recovery time of 0.025 us, making it a top choice for your electronic projects. Experience the value and benefits that this product brings, from its high output current of 0.85 A to its maximum repetitive peak reverse voltage of 200 V. Elevate your designs with the BYD77D,115 and take your creations to the next level.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package provides better thermal conductivity and insulation, ensuring long-term reliability and stability.

Config: SINGLE

Single configuration simplifies installation and maintenance, reducing the chances of errors or faults.

Surface Mount: YES

Surface mount capability allows for easy and compact integration onto PCBs, saving space and reducing assembly complexity.

Maximum Reverse Recovery Time: 0.025 us

Fast reverse recovery time ensures efficient and responsive diode operation, suitable for high-speed applications.

Package Shape: ROUND

Round package shape provides better mechanical strength and allows for uniform stress distribution, enhancing robustness.

No. of Terminals: 2

Having only two terminals simplifies circuit connections and reduces potential points of failure.

Package Style (Meter): LONG FORM

Long form package style offers versatility in mounting options and facilitates secure placement in various applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability under challenging environmental conditions, suitable for industrial use.

Terminal Position: END

End terminal position enables easy and secure connection within the circuit, enhancing overall stability.

Case Connection: ISOLATED

Isolated case connection ensures electrical safety and prevents short circuits, improving overall system performance.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for effective conversion of alternating current to direct current, essential for various power supply applications.

Maximum Output Current: 0.85 A

High maximum output current rating enables the diode to handle substantial power loads, making it suitable for heavy-duty applications.

Technology: AVALANCHE

Avalanche technology provides enhanced reliability and robustness, making the diode suitable for demanding and high-power applications.

Terminal Form: WRAP AROUND

Wrap-around terminal form ensures secure and reliable connections, reducing the risk of disconnection or loosening over time.

Maximum Repetitive Peak Reverse Voltage: 200 V

High maximum repetitive peak reverse voltage rating ensures the diode can withstand voltage spikes or transients, increasing overall durability.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and performance, making it a reliable choice for various applications requiring precise voltage regulation.

Technical Specifications

Diodes & Rectifiers BYD77D,115 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

O-LELF-R2

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

.85 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.025 us

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BYD77D,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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