Loading...

PMEG1201AESF,315

NXP Semiconductors

PMEG1201AESF,315 by NXP Semiconductors

PMEG1201AESF,315 by NXP Semiconductors is a single Schottky rectifier diode with a max reverse recovery time of 0.0022 us and max forward voltage of 0.25 V. It is designed for efficiency applications, operating b/w -55 to 125 °C, with a package style of chip carrier.

Median Price

$0.045

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 53,718 parts In-Stock

1+ parts

$0.045

100+ parts

$0.043

1k+ parts

$0.039

10k+ parts

-

53,718

$0.045

$0.043

$0.039

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,086 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

-

3,086

$0.043

-

-

-

DigiKey Marketplace

USA . 53,718 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

53,718

-

-

-

-

Vyrian

USA . 13,081 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,081

-

-

-

-

Anansix

USA . 1,315 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,315

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 4,230 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

-

4,230

$0.040

-

-

-

AZTECH Wire

Italy . 469 parts In-Stock

1+ parts

$16.050

100+ parts

-

1k+ parts

-

10k+ parts

-

469

$16.050

-

-

-

Continental Prestige Electronics

USA . 53,718 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.052

10k+ parts

-

53,718

-

-

$0.052

-

UNI Independent Distributors

Spain . 6,392 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,392

-

-

-

-

Overview

Discover the PMEG1201AESF,315 by NXP Semiconductors, a top-quality rectifier diode designed for efficiency applications. With a fast reverse recovery time and low forward voltage, this Schottky diode offers superior performance and reliability. The chip carrier package ensures easy surface mounting, making it ideal for a wide range of electronic devices. Trust NXP Semiconductors for cutting-edge technology and innovative solutions that deliver value and benefits to our customers. Upgrade your products with the PMEG1201AESF,315 for enhanced performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, making it suitable for a variety of applications.

Maximum Reverse Recovery Time: 0.0022 us

Fast reverse recovery time allows for efficient operation and minimal energy loss in the diode.

Maximum Power Dissipation: 0.325 W

High power dissipation capability ensures that the diode can handle high power loads effectively.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop, faster switching speeds, and lower leakage current compared to standard silicon diodes.

Maximum Repetitive Peak Reverse Voltage: 12 V

Suitable for applications requiring up to 12V reverse voltage protection.

Technical Specifications

Diodes & Rectifiers PMEG1201AESF,315 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Application:

EFFICIENCY

Minimum Breakdown Voltage:

12 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.25 V

JESD-30 Code:

R-PBCC-N2

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Maximum Power Dissipation:

.325 W

Reference Standard:

IEC-60134

Maximum Repetitive Peak Reverse Voltage:

12 V

Maximum Reverse Current:

2000 uA

Maximum Reverse Recovery Time:

.0022 us

Reverse Test Voltage:

12 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

PMEG1201AESF,315 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20