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PMEG45A10EPD,146

NXP Semiconductors

PMEG45A10EPD,146 by NXP Semiconductors

PMEG45A10EPD,146 by NXP Semiconductors is a Schottky rectifier diode with a max forward voltage of 0.54V and a max reverse recovery time of 0.013us. It has a max power dissipation of 0.9W and is designed for efficiency applications in electronics, with an operating temperature range from -55°C to 150°C.

Median Price

$0.532

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 414,000 parts In-Stock

1+ parts

$0.302

100+ parts

$0.284

1k+ parts

$0.257

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414,000

$0.302

$0.284

$0.257

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Farnell

UK . 397,623 parts In-Stock

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$0.761

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$0.761

Avnet

USA . 160,623 parts In-Stock

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160,623

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Digiode

USA . 1,794 parts In-Stock

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$0.287

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Vyrian

USA . 8,812 parts In-Stock

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Anansix

USA . 139 parts In-Stock

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139

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Distributors (Availability)

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Corphita

USA . 4,541 parts In-Stock

1+ parts

$0.272

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4,541

$0.272

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AZTECH Wire

Italy . 51 parts In-Stock

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$11.640

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51

$11.640

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Continental Prestige Electronics

USA . 414,000 parts In-Stock

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$0.330

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414,000

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$0.330

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QUARKTWIN TECHNOLOGY LTD

USA . 17,561 parts In-Stock

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UNI Independent Distributors

Spain . 4,090 parts In-Stock

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Overview

Experience the superior quality and reliability of NXP Semiconductors with the PMEG45A10EPD,146. This Schottky rectifier diode offers unparalleled efficiency and performance in a compact package, making it ideal for a wide range of applications. With a maximum forward voltage of 0.54V and a maximum power dissipation of 0.9W, this diode is designed to exceed expectations. Trust NXP Semiconductors for cutting-edge technology and innovative solutions that deliver results. Upgrade your projects with the PMEG45A10EPD,146 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good insulation properties and protection against external factors, making the diode durable and reliable.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, saving space and making the product suitable for compact electronic devices.

Maximum Reverse Recovery Time: 0.013 us

Low reverse recovery time ensures fast switching performance and reduces power losses, leading to improved efficiency in electronic circuits.

Maximum Reverse Current: 500 uA

Low reverse current minimizes leakage current, enhancing the overall performance and reliability of the diode in various applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows the diode to withstand elevated temperatures without performance degradation, ensuring reliability in demanding environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for rectifying alternating current into direct current, making them ideal for power supply and conversion applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed compared to standard diodes, making them suitable for high-frequency applications and reducing power losses.

Technical Specifications

Diodes & Rectifiers PMEG45A10EPD,146 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.54 V

JESD-30 Code:

R-PDSO-F3

Maximum Non Repetitive Peak Forward Current:

170 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.9 W

Reference Standard:

IEC-60134

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

500 uA

Maximum Reverse Recovery Time:

.013 us

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

PMEG45A10EPD,146 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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