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PMEG050V150EPD,139

NXP Semiconductors

PMEG050V150EPD,139 by NXP Semiconductors

PMEG050V150EPD,139 by NXP Semiconductors is a single Schottky rectifier diode with a max forward voltage of 0.5V and a max repetitive peak reverse voltage of 50V. It is designed for efficiency applications, operates b/w -55 to 150°C, and has a package style of small outline for surface mount assembly.

Median Price

$0.383

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 127,908 parts In-Stock

1+ parts

$0.383

100+ parts

$0.360

1k+ parts

$0.326

10k+ parts

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127,908

$0.383

$0.360

$0.326

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Avnet

USA . 30 parts In-Stock

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30

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Distributors (In-Stock)

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Digiode

USA . 2,638 parts In-Stock

1+ parts

$0.364

100+ parts

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2,638

$0.364

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DigiKey Marketplace

USA . 127,908 parts In-Stock

1+ parts

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100+ parts

$0.380

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127,908

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$0.380

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Vyrian

USA . 3,714 parts In-Stock

1+ parts

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3,714

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Anansix

USA . 2,118 parts In-Stock

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2,118

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Distributors (Availability)

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Corphita

USA . 3,540 parts In-Stock

1+ parts

$0.345

100+ parts

-

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3,540

$0.345

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AZTECH Wire

Italy . 146 parts In-Stock

1+ parts

$16.500

100+ parts

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146

$16.500

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Continental Prestige Electronics

USA . 127,908 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.410

10k+ parts

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127,908

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$0.410

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QUARKTWIN TECHNOLOGY LTD

USA . 5,672 parts In-Stock

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5,672

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UNI Independent Distributors

Spain . 5,510 parts In-Stock

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5,510

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Overview

Experience significant improvements in efficiency with the PMEG050V150EPD,139 by NXP Semiconductors. This high-quality diode offers unparalleled performance and reliability for a variety of applications. Whether you're looking to enhance power management systems or optimize battery charging circuits, this product provides exceptional value and benefits. Trust NXP Semiconductors to deliver innovative solutions that meet your needs while maximizing operation temperature and power dissipation capabilities. Upgrade your technology today with the PMEG050V150EPD,139 and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides good insulation and protection for the diode.

Config: SINGLE

Single configuration makes it easy to integrate into circuits and simplifies design.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Maximum Reverse Current: 1000 uA

Low maximum reverse current ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and positioning on the PCB.

No. of Terminals: 3

3 terminals provide necessary connectivity options for circuit integration.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables compact designs.

Application: EFFICIENCY

Designed for efficiency, making it suitable for applications where power conservation is key.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance in various operating conditions.

Minimum Operating Temperature: -55 °C

Wide range of operating temperature allows for use in extreme environments.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and connection options.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and ensures proper polarity.

Maximum Power Dissipation: 0.78 W

High power dissipation capability allows for handling higher power loads.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability of the product.

Diode Type: RECTIFIER DIODE

Rectifier diode type indicates its suitability for rectifying AC to DC conversion.

Maximum Forward Voltage (VF): 0.5 V

Low forward voltage drop results in less power loss and higher efficiency.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop for improved efficiency.

Terminal Form: FLAT

Flat terminal form facilitates easy soldering and secure PCB mounting.

Maximum Repetitive Peak Reverse Voltage: 50 V

High repetitive peak reverse voltage capability allows for handling higher voltage applications.

Diode Element Material: SILICON

Silicon diode element material ensures reliability and durability in various operating conditions.

Technical Specifications

Diodes & Rectifiers PMEG050V150EPD,139 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JESD-30 Code:

R-PDSO-F3

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.78 W

Reference Standard:

AEC-Q101; IEC-60134

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

1000 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

PMEG050V150EPD,139 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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