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NXPS20S100C,127

NXP Semiconductors

NXPS20S100C,127 by NXP Semiconductors

NXPS20S100C,127 from NXP Semiconductors is a Schottky rectifier diode designed for high-efficiency applications. It operates at a max temp of 175 °C, supports up to 10 A output current, and has a peak reverse voltage of 100 V. Ideal for power management in electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,913 parts In-Stock

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Digiode

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Anansix

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One Stop Electronics

USA . 479 parts In-Stock

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$0.010

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Component Stockers USA

USA . 50,238 parts In-Stock

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$2.490

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AZTECH Wire

Italy . 556 parts In-Stock

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Perfect Parts

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Corphita

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Overview

Elevate your designs with the NXPS20S100C,127 from NXP Semiconductors, a trusted leader in innovation. This high-performance Schottky rectifier diode offers unbeatable efficiency and reliability, perfect for applications demanding superior thermal management and durability. With its robust 10A output capacity and impressive reverse voltage rating, it's tailored to enhance your systems while maximizing energy savings. Choose NXP for unparalleled quality and performance that drives your success!

Feature Benefit Bullets

Maximum Operating Temperature: 175 °C

The high operating temperature allows this diode to function reliably in harsher environments, ensuring longevity and reducing the risk of thermal-related failures.

Terminal Finish: Tin (Sn)

The tin finish provides excellent solderability, ensuring robust connections and compatibility with various assembly processes.

Diode Type: Rectifier Diode

As a rectifier diode, it is designed specifically for converting AC to DC, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 0.58 V

A low forward voltage drop minimizes power loss and enhances the overall efficiency of the circuit, making it suitable for energy-sensitive applications.

Maximum Output Current: 10 A

The capability to handle up to 10 A allows this diode to support a wide range of high-current applications, providing reliability in demanding situations.

Technology: Schottky

Schottky diodes are known for their fast switching speeds and low forward voltage drop, making them ideal for high-frequency applications and improving overall efficiency.

Maximum Repetitive Peak Reverse Voltage: 100 V

This high reverse voltage rating ensures that the diode can withstand significant reverse bias, enhancing its robustness in diverse operating conditions.

Maximum Non-Repetitive Peak Forward Current: 150 A

The ability to endure a peak forward current of 150 A makes this diode suitable for pulsed power applications, providing resilience against sudden surges without damage.

Technical Specifications

Diodes & Rectifiers NXPS20S100C,127 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Diode Type:

Maximum Forward Voltage (VF):

.58 V

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

10 A

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin (Sn)

Trade Compliance

NXPS20S100C,127 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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