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NXPS20H110C,127

NXP Semiconductors

NXPS20H110C,127 by NXP Semiconductors

NXPS20H110C,127 by NXP Semiconductors is a Schottky rectifier diode designed for high-efficiency applications. It operates at a max temp of 175 °C, supports 20 A output current, and has a peak reverse voltage of 110 V. Ideal for power management in various electronic devices.

Median Price

$0.410

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,948 parts In-Stock

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-

100+ parts

$0.330

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$0.274

10k+ parts

$0.244

1,948

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$0.330

$0.274

$0.244

DigiKey

USA . 1,948 parts In-Stock

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$0.410

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1,948

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Verical

USA . 1,013 parts In-Stock

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$0.413

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1,013

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$0.413

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Distributors (In-Stock)

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Digiode

USA . 1,296 parts In-Stock

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$0.257

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$0.257

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Vyrian

USA . 4,484 parts In-Stock

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$0.271

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Anansix

USA . 1,189 parts In-Stock

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1,189

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Distributors (Availability)

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Corphita

USA . 3,942 parts In-Stock

1+ parts

$0.244

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3,942

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QUARKTWIN TECHNOLOGY LTD

USA . 12,463 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Microchip USA

USA . 5,944 parts In-Stock

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UNI Independent Distributors

Spain . 2,756 parts In-Stock

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Overview

Elevate your designs with the NXPS20H110C,127 from NXP Semiconductors—a leader in reliable semiconductor solutions. This high-performance rectifier diode excels in demanding applications, offering outstanding efficiency and thermal stability up to 175 °C. Its Schottky technology ensures minimal power loss, making it ideal for power supplies, automotive electronics, and renewable energy systems. Choose NXP for quality you can trust, delivering superior value and performance to every project!

Feature Benefit Bullets

Maximum Operating Temperature: 175 °C

Withstand high temperatures, making it suitable for demanding applications.

Terminal Finish: Tin (Sn)

Ensures reliable solderability and excellent corrosion resistance.

Diode Type: RECTIFIER DIODE

Ideal for converting alternating current (AC) to direct current (DC), making it essential for power supply circuits.

Maximum Forward Voltage (VF): 0.64 V

Low forward voltage drop enhances efficiency and minimizes power losses.

Maximum Output Current: 20 A

Capable of handling significant current loads, suitable for high power applications.

Technology: SCHOTTKY

Provides fast switching speeds and low forward voltage drop, enhancing overall system performance.

Maximum Repetitive Peak Reverse Voltage: 110 V

Robust enough for a variety of applications, capable of handling voltage spikes.

Maximum Non-Repetitive Peak Forward Current: 250 A

Can handle high current surges without damage, making it ideal for transient applications.

Technical Specifications

Diodes & Rectifiers NXPS20H110C,127 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Diode Type:

Maximum Forward Voltage (VF):

.64 V

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Maximum Repetitive Peak Reverse Voltage:

110 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin (Sn)

Trade Compliance

NXPS20H110C,127 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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