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NXPS20H100C,127

NXP Semiconductors

NXPS20H100C,127 by NXP Semiconductors

NXPS20H100C,127 by NXP Semiconductors is a Schottky rectifier diode designed for high-efficiency applications. It operates at a max temp of 175 °C, supports up to 10 A output current, and has a peak reverse voltage of 100 V. Ideal for power management in electronics.

Median Price

$0.317

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,832 parts In-Stock

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$0.317

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$0.263

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$0.235

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DigiKey

USA . 3,832 parts In-Stock

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$0.400

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Verical

USA . 3,515 parts In-Stock

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$0.293

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$0.293

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Digiode

USA . 132 parts In-Stock

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Vyrian

USA . 3,007 parts In-Stock

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DigiKey Marketplace

USA . 3,832 parts In-Stock

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Anansix

USA . 2,534 parts In-Stock

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Corphita

USA . 4,706 parts In-Stock

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$0.234

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UNI Independent Distributors

Spain . 6,662 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,695 parts In-Stock

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Authorized Procurement Solutions

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Overview

Unlock unparalleled performance with the NXPS20H100C,127 Schottky Rectifier Diode by NXP Semiconductors. Renowned for their quality and innovation, NXP delivers reliable solutions that excel in high-temperature applications up to 175 °C. With impressive efficiency and a robust design, this diode ensures optimal power management for your projects, making it ideal for automotive, industrial, and consumer electronics. Elevate your designs and experience the exceptional value and reliability that only NXP can provide!

Feature Benefit Bullets

Maximum Operating Temperature: 175 °C

This high maximum operating temperature ensures that the diode can function effectively in demanding environments without overheating, making it suitable for high-performance applications.

Terminal Finish: Tin (Sn)

The use of tin terminal finish enhances solderability and provides good corrosion resistance, ensuring reliable connections and durability over time.

Diode Type: Rectifier Diode

As a rectifier diode, this component excels in converting alternating current (AC) to direct current (DC), making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.58 V

A lower forward voltage drop improves efficiency, reducing power loss and heat generation during operation, which is critical for energy-sensitive designs.

Maximum Output Current: 10 A

The capability to handle up to 10 A of output current allows for robust performance in various applications, accommodating significant load requirements.

Technology: Schottky

Schottky technology offers fast switching speeds and low forward voltage drop, improving overall circuit efficiency and enabling high-frequency operation.

Maximum Repetitive Peak Reverse Voltage: 100 V

This high voltage rating ensures safe operation in circuits with significant voltage spikes, providing reliability and extending the lifespan of the diode.

Maximum Non-Repetitive Peak Forward Current: 250 A

The ability to handle peak forward currents of up to 250 A allows for transient handling in power applications, making the diode resilient against surges.

Technical Specifications

Diodes & Rectifiers NXPS20H100C,127 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Diode Type:

Maximum Forward Voltage (VF):

.58 V

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

10 A

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Tin (Sn)

Trade Compliance

NXPS20H100C,127 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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