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BY359-1500,127

NXP Semiconductors

BY359-1500,127 by NXP Semiconductors

BY359-1500,127 by NXP Semiconductors is a single rectifier diode with a max reverse recovery time of 0.6 us and a max operating temperature of 125°C. It has a max forward voltage of 2.3V and output current of 6.5A, making it suitable for high-voltage applications requiring fast switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 12,979 parts In-Stock

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Digiode

USA . 4,655 parts In-Stock

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Anansix

USA . 1,126 parts In-Stock

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VNN

France . 25 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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One Stop Electronics

USA . 747 parts In-Stock

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Ampacity Inc.

Singapore . 709 parts In-Stock

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AZTECH Wire

Italy . 588 parts In-Stock

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Continental Prestige Electronics

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Microchip USA

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UNI Independent Distributors

Spain . 3,629 parts In-Stock

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Corphita

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Argo Parts USA

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Robosynatics

Brazil . 250 parts In-Stock

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Lucentia Tech

USA . 250 parts In-Stock

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Bastille Electronics

Australia . 30 parts In-Stock

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Overview

Experience superior quality and performance with the BY359-1500,127 by NXP Semiconductors. As a leading manufacturer in the industry, NXP Semiconductors delivers top-notch diodes and rectifiers that are reliable and efficient. Ideal for a range of applications, this RECTIFIER DIODE offers a maximum output current of 6.5 A and a maximum reverse recovery time of 0.6 us. With a matte tin terminal finish and a maximum repetitive peak reverse voltage of 1500 V, this product ensures long-lasting durability and optimal functionality. Upgrade your electronic projects with the BY359-1500,127 and enjoy unmatched value and benefits that cater to your specific needs.

Feature Benefit Bullets

Config: SINGLE

This configuration allows for easy integration into various electronic systems.

Max Reverse Recovery Time: 0.6 us

The short reverse recovery time ensures efficient and reliable operation.

Max Operating Temperature: 125 °C

With a high operating temperature, this diode can withstand tough conditions.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides corrosion resistance for a longer lifespan.

Diode Type: RECTIFIER DIODE

This rectifier diode is ideal for converting AC to DC with minimal voltage loss.

Max Forward Voltage (VF): 2.3 V

The low forward voltage drop helps minimize power loss and increase efficiency.

Max Output Current: 6.5 A

With a high output current, this diode can handle demanding applications.

Max Repetitive Peak Reverse Voltage: 1500 V

The high reverse voltage rating makes this diode suitable for high-power circuits.

Max Non Repetitive Peak Forward Current: 60 A

The high non-repetitive peak forward current allows for surge protection in heavy-duty systems.

Technical Specifications

Diodes & Rectifiers BY359-1500,127 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

2.3 V

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

6.5 A

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

.6 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

BY359-1500,127 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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