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BY359-1000

NXP Semiconductors

BY359-1000 by NXP Semiconductors

BY359-1000 from NXP Semiconductors is a single rectifier diode ideal for high-voltage applications. It features a max reverse recovery time of 0.6 µs, operates at up to 125 °C, and handles currents up to 6.5 A with a peak reverse voltage of 1000 V. This diode is perfect for power supply circuits and energy conversion systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,233 parts In-Stock

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Vyrian

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Anansix

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One Stop Electronics

USA . 470 parts In-Stock

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UNI Independent Distributors

Spain . 3,528 parts In-Stock

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Corphita

USA . 1,977 parts In-Stock

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Northwest PG Solutions

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Native Components

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Overview

Unlock unparalleled performance with the BY359-1000 rectifier diode from NXP Semiconductors. Renowned for its exceptional reliability and quality, NXP ensures you receive a product that excels in demanding applications like power supplies and industrial automation. Enjoy the benefits of reduced energy loss and enhanced efficiency, while its robust design withstands extreme conditions, making it the ideal choice for your next project. Elevate your solutions with the trust of a leading manufacturer!

Feature Benefit Bullets

Configuration: SINGLE

This single configuration makes the diode easy to integrate into various applications, offering simplicity and efficiency in circuit design.

Maximum Reverse Recovery Time: 0.6 us

A low reverse recovery time enhances switching performance, making this diode suitable for high-speed applications, reducing power loss and improving efficiency.

Maximum Operating Temperature: 125 °C

The ability to operate at high temperatures allows for greater reliability and performance in demanding environments, making it suitable for a wide range of applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), essential in power supply designs and various electronic circuits.

Maximum Forward Voltage (VF): 2.3 V

A low forward voltage drop minimizes energy loss during operation, contributing to overall efficiency in power management systems.

Maximum Output Current: 6.5 A

With a high maximum output current, this diode can handle significant loads, making it suitable for power applications where robustness is required.

Maximum Repetitive Peak Reverse Voltage: 1000 V

A high peak reverse voltage rating allows the diode to handle voltage spikes, ensuring durability and reliability in high-voltage applications.

Maximum Non-Repetitive Peak Forward Current: 60 A

This diode can withstand high surge currents, providing flexibility in designs where brief high current events might occur without immediate failure.

Technical Specifications

Diodes & Rectifiers BY359-1000 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

2.3 V

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

6.5 A

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Recovery Time:

.6 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

BY359-1000 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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