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BY359-1300

NXP Semiconductors

BY359-1300 by NXP Semiconductors

BY359-1300 by NXP Semiconductors is a single rectifier diode ideal for high-voltage applications. It features a max reverse recovery time of 0.6 µs, operates at up to 125 °C, and handles peak reverse voltages of 1300 V with a forward current of 6.5 A. This diode is perfect for power supply circuits and energy conversion systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,465 parts In-Stock

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Digiode

USA . 1,705 parts In-Stock

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1,705

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Vyrian

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Mentor Electronics Marketing, LLC

USA . 134 parts In-Stock

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134

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One Stop Electronics

USA . 498 parts In-Stock

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$1.010

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498

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UNI Independent Distributors

Spain . 7,131 parts In-Stock

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Northwest PG Solutions

USA . 1,469 parts In-Stock

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Corphita

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Native Components

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Overview

Elevate your designs with the BY359-1300 rectifier diode from NXP Semiconductors, a trusted leader in innovative technology. Engineered for exceptional reliability and performance, this diode ensures efficient power management in applications ranging from renewable energy to industrial machinery. Experience enhanced durability and superior thermal handling, empowering your projects with unmatched quality and peace of mind. Choose BY359-1300 for efficiency that drives success!

Feature Benefit Bullets

Config: SINGLE

A single configuration simplifies circuit design, making it easier to implement in various applications.

Maximum Reverse Recovery Time: 0.6 us

The fast reverse recovery time allows for efficient switching, reducing power loss and improving overall circuit performance.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature indicates excellent thermal performance, enabling reliable operation in demanding environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting AC to DC, making it ideal for power supply and other rectification applications.

Maximum Forward Voltage (VF): 2.3 V

A low forward voltage drop minimizes power loss during operation, enhancing energy efficiency in circuits.

Maximum Output Current: 6.5 A

With a maximum output current of 6.5 A, this diode can handle significant loads, making it suitable for various high-current applications.

Maximum Repetitive Peak Reverse Voltage: 1300 V

High peak reverse voltage capability ensures durability and reliability in high-voltage applications, preventing breakdown.

Maximum Non-Repetitive Peak Forward Current: 60 A

The ability to withstand high non-repetitive peak forward currents provides robustness, allowing for handling surge conditions without failure.

Technical Specifications

Diodes & Rectifiers BY359-1300 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

2.3 V

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

6.5 A

Maximum Repetitive Peak Reverse Voltage:

1300 V

Maximum Reverse Recovery Time:

.6 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

BY359-1300 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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