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BAT254,115

NXP Semiconductors

BAT254,115 by NXP Semiconductors

BAT254,115 by NXP Semiconductors is a Schottky rectifier diode with a max forward voltage of 0.8V and output current of 0.2A. It has a fast reverse recovery time of 0.005us, making it suitable for high-speed applications in electronics requiring low power consumption and small outline packages. The diode's peak repetitive reverse voltage is 30V, ideal for circuits where efficient energy conversion is crucial.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Infinite Electronics LLP

India . 12,000 parts In-Stock

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12,000

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Vyrian

USA . 5,496 parts In-Stock

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Ashlea Components Ltd

UK . 2,760 parts In-Stock

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Anansix

USA . 1,646 parts In-Stock

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VNN

France . 955 parts In-Stock

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Digiode

USA . 642 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.099

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$0.090

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$0.081

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200

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Corohmni

South Africa . 269 parts In-Stock

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$0.170

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Ampacity Inc.

Singapore . 1,117 parts In-Stock

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$1.010

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One Stop Electronics

USA . 1,413 parts In-Stock

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AZTECH Wire

Italy . 565 parts In-Stock

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$12.757

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Corphita

USA . 3,669 parts In-Stock

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UNI Independent Distributors

Spain . 2,044 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Microchip USA

USA . 289 parts In-Stock

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Overview

Discover the unmatched quality and reliability of the BAT254,115 by NXP Semiconductors. As a leading manufacturer in the industry, NXP Semiconductors ensures that this diode offers superior performance and efficiency. Ideal for a range of applications, the BAT254,115 provides customers with exceptional value through its advanced technology and innovative design. Experience the benefits of this product firsthand and unlock new possibilities for your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired package body material provides durability and robustness, ensuring the product can withstand harsh operating conditions.

Config: SINGLE

The single configuration simplifies the setup and installation process, making this product user-friendly.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort in production.

Maximum Reverse Recovery Time: 0.005 us

The extremely fast reverse recovery time ensures efficient operation and minimal power loss in high-speed applications.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient and allows for easy placement on the circuit board.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process, reducing the chance of wiring errors.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can reliably operate in a wide range of environments.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and allows for easy connection to other components.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures the product can withstand the soldering process during assembly without any damage.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC to DC, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.8 V

The low maximum forward voltage results in minimal power loss and high efficiency in forward conduction.

Maximum Output Current: 0.2 A

The high maximum output current rating allows for the handling of moderate power loads, making it versatile in various electronic circuits.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching speeds, making this product suitable for high-frequency applications.

Terminal Form: WRAP AROUND

The wrap-around terminal form provides secure and reliable connections, ensuring stable performance in demanding conditions.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a high maximum repetitive peak reverse voltage rating, this product offers protection against reverse voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 0.6 A

The high maximum non-repetitive peak forward current capability allows the product to withstand short-term overcurrent conditions without damage.

Diode Element Material: SILICON

Silicon diodes are reliable and widely used in various applications due to their stable electrical properties and performance over time.

Technical Specifications

Diodes & Rectifiers BAT254,115 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JESD-30 Code:

R-CDSO-R2

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.2 A

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.005 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAT254,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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