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BY329X-1500,127

NXP Semiconductors

BY329X-1500,127 by NXP Semiconductors

BY329X-1500,127 from NXP Semiconductors is a single rectifier diode ideal for high-voltage applications. It operates at a max temp of 150 °C, with a forward voltage of 1.5V and supports up to 11A output current. Perfect for power supply circuits and energy conversion systems.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 12,563 parts In-Stock

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Digiode

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Anansix

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One Stop Electronics

USA . 1,214 parts In-Stock

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AZTECH Wire

Italy . 714 parts In-Stock

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Microchip USA

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QUARKTWIN TECHNOLOGY LTD

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UNI Independent Distributors

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Northwest PG Solutions

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Native Components

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Corphita

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Overview

Elevate your designs with the BY329X-1500,127 from NXP Semiconductors, where quality meets reliability. This rectifier diode delivers exceptional performance across various applications, ensuring seamless operation in demanding environments. With a robust construction that withstands temperatures up to 150 °C and impressive current handling, it’s the ideal choice for powering your innovations. Trust NXP's legacy of excellence to enhance efficiency and longevity in your projects!

Feature Benefit Bullets

Configuration: SINGLE

A single diode configuration simplifies the circuit design and reduces potential points of failure, making it a reliable choice for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can perform effectively in demanding environments where heat management is critical.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component is engineered for efficient conversion of alternating current (AC) to direct current (DC), ideal for power supply applications.

Maximum Forward Voltage (VF): 1.5 V

A low maximum forward voltage leads to minimal power loss during operation, enhancing overall energy efficiency in applications.

Maximum Output Current: 11 A

Capable of handling a substantial output current, this diode is suitable for high-power applications, ensuring reliable performance under load.

Maximum Repetitive Peak Reverse Voltage: 1500 V

With a high maximum repetitive peak reverse voltage, this diode can withstand significant voltage spikes, making it resilient in harsh electrical environments.

Maximum Non Repetitive Peak Forward Current: 75 A

The ability to handle a maximum non-repetitive peak forward current of 75 A provides flexibility in peak load applications without immediate failure risk.

Technical Specifications

Diodes & Rectifiers BY329X-1500,127 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

11 A

Maximum Repetitive Peak Reverse Voltage:

1500 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

BY329X-1500,127 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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