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C BEND Diodes & Rectifiers 567

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
NRVUS2FA by Onsemi

NRVUS2FA

Onsemi

NRVUS2FA by Onsemi is a single diode with fast recovery time of 0.05 us and low reverse current of 5 uA. It operates at temperatures from -55 to 150 °C, ideal for super fast recovery applications. With a max output current of 1.5 A and peak reverse voltage of 300 V, it's suitable for various rectifier diode needs in electronics.

SUPER FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-214AC

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

300 V

5 uA

.05 us

300 V

YES

MATTE TIN

C BEND

DUAL

30

NRVUS2GA by Onsemi

NRVUS2GA

Onsemi

NRVUS2GA by Onsemi is a single diode with PLASTIC/EPOXY body, ideal for SUPER FAST RECOVERY applications. It features 0.075 us reverse recovery time, 5 uA reverse current, and 400 V reverse test voltage. Suitable for high-speed rectification tasks with operating temperatures ranging from -55 to 150 °C.

SUPER FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-214AC

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

400 V

5 uA

.075 us

400 V

YES

MATTE TIN

C BEND

DUAL

30

NRVS3AB by Onsemi

NRVS3AB

Onsemi

NRVS3AB by Onsemi is a single rectifier diode with a max output current of 3A and forward voltage of 1.15V. It has a reverse test voltage of 50V, making it suitable for applications requiring fast recovery times in small outline packages. With an operating temperature range from -55 to 150 °C, it meets AEC-Q101 standards for automotive use.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AA

R-PDSO-C2

e3

1

80 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

50 V

10 uA

1.5 us

50 V

YES

MATTE TIN

C BEND

DUAL

30

NRVS3BB by Onsemi

NRVS3BB

Onsemi

NRVS3BB by Onsemi is a single rectifier diode with a max reverse recovery time of 1.5 us and max output current of 3 A. It operates in temperatures ranging from -55 to 150 °C and is ideal for applications requiring a small outline, surface-mount diode with a peak reflow temperature of 260 °C.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AA

R-PDSO-C2

e3

1

80 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

10 uA

1.5 us

100 V

YES

MATTE TIN

C BEND

DUAL

30

NRVS3DB by Onsemi

NRVS3DB

Onsemi

NRVS3DB by Onsemi is a single rectifier diode with a max output current of 3A and forward voltage of 1.15V. It has a reverse test voltage of 200V, making it suitable for applications requiring high efficiency and low power loss in automotive electronics. With a small outline package style and matte tin terminal finish, it operates b/w -55 to 150 °C, meeting AEC-Q101 standards.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AA

R-PDSO-C2

e3

1

80 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

200 V

10 uA

1.5 us

200 V

YES

MATTE TIN

C BEND

DUAL

30

NRVS3JB by Onsemi

NRVS3JB

Onsemi

NRVS3JB by Onsemi is a single rectifier diode with a reverse test voltage of 600V and max output current of 3A. It features a small outline package style, matte tin terminal finish, and operates b/w -55 to 150 °C. Ideal for applications requiring high reverse recovery time and low reverse current.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AA

R-PDSO-C2

e3

1

80 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

600 V

10 uA

1.5 us

600 V

YES

MATTE TIN

C BEND

DUAL

30

NRVS3KB by Onsemi

NRVS3KB

Onsemi

NRVS3KB by Onsemi is a single rectifier diode with 800V reverse test voltage and 1.5us max reverse recovery time. Ideal for applications requiring high efficiency and low power loss, such as automotive electronics or industrial power supplies. It features a small outline package with matte tin terminal finish, operating from -55 to 150 °C temperature range.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AA

R-PDSO-C2

e3

1

80 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

800 V

10 uA

1.5 us

800 V

YES

MATTE TIN

C BEND

DUAL

30

SS510B-HF by Comchip Technology

SS510B-HF

Comchip Technology

SS510B-HF by Comchip Technology is a Schottky rectifier diode with a max output current of 5A and a max reverse voltage of 200V. It operates b/w -55°C to 150°C, making it suitable for high-efficiency applications. This single-configured diode is surface mountable and has a plastic/epoxy package body material.

LOW POWER LOSS, FREE WHEELING DIODE

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.85 V

DO-214AB

R-PDSO-C2

100 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

200 V

300 uA

YES

SCHOTTKY

C BEND

DUAL

NOT SPECIFIED

SS56B-HF by Comchip Technology

SS56B-HF

Comchip Technology

SS56B-HF by Comchip Technology is a Schottky rectifier diode with max output current of 5A and max repetitive peak reverse voltage of 60V. It operates b/w -55 to 150°C, ideal for efficiency applications. This single-config diode in small outline package is surface mountable, featuring dual terminals and C bend terminal form.

LOW POWER LOSS, FREE WHEELING DIODE

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.7 V

DO-214AA

R-PDSO-C2

150 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

60 V

300 uA

YES

SCHOTTKY

C BEND

DUAL

NOT SPECIFIED

ES3JC-HF by Comchip Technology

ES3JC-HF

Comchip Technology

ES3JC-HF by Comchip Tech: Rectifier diode with 600V reverse test voltage, 0.035us reverse recovery time, and 3A max output current. Ideal for efficiency applications due to low forward voltage of 1.68V and small outline package style. Operates b/w -55°C to 150°C temperature range.

EFFICIENCY

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.68 V

DO-214AB

R-PDSO-C2

90 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

600 V

5 uA

.035 us

600 V

YES

C BEND

DUAL

NRVRGF1A by Onsemi

NRVRGF1A

Onsemi

NRVRGF1A by Onsemi is a fast recovery rectifier diode with a max reverse recovery time of 0.15 us and max forward voltage of 1.3V. It is designed for applications requiring high-speed switching capabilities, operating b/w -65 to 175 °C, making it suitable for automotive electronics due to its AEC-Q101 reference standard compliance.

FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-214AC

R-PDSO-C2

30 A

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.76 W

AEC-Q101

50 V

5 uA

.15 us

YES

C BEND

DUAL

NOT SPECIFIED

NRVRGF1B by Onsemi

NRVRGF1B

Onsemi

NRVRGF1B by Onsemi is a single rectifier diode with fast recovery time of 0.15 us and max reverse current of 5 uA. It operates b/w -65 to 175 °C, has a max power dissipation of 1.76 W, and is ideal for applications requiring high-speed switching capabilities.

FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-214AC

R-PDSO-C2

30 A

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.76 W

AEC-Q101

100 V

5 uA

.15 us

YES

C BEND

DUAL

NOT SPECIFIED

NRVRGF1D by Onsemi

NRVRGF1D

Onsemi

NRVRGF1D by Onsemi is a fast recovery rectifier diode with 200V peak reverse voltage, 0.15us reverse recovery time, and 1A output current. It operates b/w -65 to 175°C, suitable for high-power applications requiring quick response times in automotive electronics.

FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-214AC

R-PDSO-C2

30 A

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.76 W

AEC-Q101

200 V

5 uA

.15 us

YES

C BEND

DUAL

NOT SPECIFIED

NRVRGF1G by Onsemi

NRVRGF1G

Onsemi

NRVRGF1G by Onsemi is a fast recovery rectifier diode with a max reverse recovery time of 0.15 us and max output current of 1 A. It operates in temperatures ranging from -65 to 175 °C, making it suitable for high-power applications requiring quick response times. The diode's package style is small outline, with a max power dissipation of 1.76 W, ideal for surface mount configurations in various electronic devices.

FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-214AC

R-PDSO-C2

30 A

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.76 W

AEC-Q101

400 V

5 uA

.15 us

YES

C BEND

DUAL

NOT SPECIFIED

NRVRGF1J by Onsemi

NRVRGF1J

Onsemi

NRVRGF1J by Onsemi is a single rectifier diode with 0.25us reverse recovery time and 5uA reverse current. It operates b/w -65 to 175 °C, with max power dissipation of 1.76W. Ideal for fast recovery applications due to its small outline package style and high peak reverse voltage of 600V.

FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-214AC

R-PDSO-C2

30 A

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.76 W

AEC-Q101

600 V

5 uA

.25 us

YES

C BEND

DUAL

NOT SPECIFIED

NRVRGF1K by Onsemi

NRVRGF1K

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-214AC

R-PDSO-C2

30 A

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.76 W

AEC-Q101

800 V

5 uA

.5 us

YES

C BEND

DUAL

NOT SPECIFIED

SK310AHE3-LTP by Micro Commercial Components

SK310AHE3-LTP

Micro Commercial Components

SK310AHE3-LTP by Micro Commercial Components is a Schottky rectifier diode with a max forward voltage of 0.8V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in automotive electronics, power supplies, and consumer electronics.

GENERAL PURPOSE

100 V

SINGLE

SILICON

RECTIFIER DIODE

.8 V

DO-214AC

R-PDSO-C2

e3

1

80 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

1 uA

100 V

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

10

UF1D_R1_00001 by Panjit International

UF1D_R1_00001

Panjit International

UF1D_R1_00001 by Panjit Int. is a single rectifier diode with max output current of 1A and max reverse voltage of 200V. Its plastic package makes it suitable for surface mount applications in temp range -55 to 150°C, offering fast recovery time of 0.05 us.

SINGLE

SILICON

RECTIFIER DIODE

DO-214AA

R-PDSO-C2

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

200 V

.05 us

YES

C BEND

DUAL

NOT SPECIFIED

TSSA5U50E3G by Taiwan Semiconductor

TSSA5U50E3G

Taiwan Semiconductor

TSSA5U50E3G by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 5A and max repetitive peak reverse voltage of 50V. It operates b/w -55 to 150°C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package with matte tin terminal finish.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.54 V

DO-214AC

R-PDSO-C2

e3

1

75 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

50 V

300 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

NRVTSS5100ET3G by Onsemi

NRVTSS5100ET3G

Onsemi

NRVTSS5100ET3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.69V and output current of 5A. It operates b/w -55 to 175°C, has a peak reflow temperature of 260°C, and is ideal for efficiency applications in automotive electronics due to its AEC-Q101 standard compliance.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.69 V

R-PDSO-C2

e3

1

50 A

1

1

2

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

9 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

C BEND

DUAL

30

ES3B-M3/57T by Vishay Intertechnology

ES3B-M3/57T

Vishay Intertechnology

ES3B-M3/57T by Vishay Intertechnology is a single rectifier diode with 100V reverse test voltage, 0.02us reverse recovery time, and 10uA reverse current. Ideal for efficiency applications, it operates b/w -55 to 150 °C with a max output current of 3A.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.9 V

DO-214AB

R-PDSO-C2

e3

1

100 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

10 uA

.02 us

100 V

Rectifier Diodes

YES

MATTE TIN

C BEND

DUAL

30

SBR3U60SA-13 by Diodes Incorporated

SBR3U60SA-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.65 V

R-PDSO-C2

e3

1

60 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

100 uA

YES

MATTE TIN

C BEND

DUAL

MURS360SHE3_A/H by Vishay Intertechnology

MURS360SHE3_A/H

Vishay Intertechnology

Vishay Intertechnology's MURS360SHE3_A/H is a single rectifier diode with a max reverse recovery time of 0.075 us and max output current of 1.5 A. It operates efficiently in temperatures ranging from -65 to 175 °C, making it ideal for various applications requiring high voltage rectification in small outline packages.

FREE WHEELING DIODE

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.45 V

DO-214AA

R-PDSO-C2

e3

1

35 A

1

1

2

175 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

600 V

5 uA

.075 us

YES

MATTE TIN

C BEND

DUAL

MURS360SHE3_A/I by Vishay Intertechnology

MURS360SHE3_A/I

Vishay Intertechnology

Vishay Intertechnology's MURS360SHE3_A/I is a single rectifier diode with a max reverse recovery time of 0.075 us and max output current of 1.5 A. It is designed for efficiency applications, operates b/w -65 to 175 °C, and has a peak repetitive reverse voltage of 600 V.

FREE WHEELING DIODE

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.45 V

DO-214AA

R-PDSO-C2

e3

1

35 A

1

1

2

175 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

600 V

5 uA

.075 us

YES

MATTE TIN

C BEND

DUAL

MURS120HE3_A/I by Vishay Intertechnology

MURS120HE3_A/I

Vishay Intertechnology

Vishay Intertechnology's MURS120HE3_A/I is a single rectifier diode with a max reverse recovery time of 0.035 us and max output current of 2 A. It operates efficiently in temperatures ranging from -65 to 175 °C, making it ideal for various applications requiring high peak forward current capabilities.

FREE WHEELING DIODE

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.875 V

DO-214AA

R-PDSO-C2

1

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

200 V

2 uA

.035 us

YES

C BEND

DUAL

MURS140HE3_A/H by Vishay Intertechnology

MURS140HE3_A/H

Vishay Intertechnology

Vishay Intertechnology's MURS140HE3_A/H is a single rectifier diode with a max reverse recovery time of 0.075 us and max output current of 2 A. It operates efficiently in temperatures ranging from -65 to 175 °C, making it suitable for various applications requiring high peak reverse voltage up to 400 V.

FREE WHEELING DIODE

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

DO-214AA

R-PDSO-C2

e3

1

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

400 V

5 uA

.075 us

YES

MATTE TIN

C BEND

DUAL

MURS140HE3_A/I by Vishay Intertechnology

MURS140HE3_A/I

Vishay Intertechnology

Vishay Intertechnology's MURS140HE3_A/I is a single rectifier diode with a max reverse recovery time of 0.075 us and max output current of 2 A. It operates efficiently in temperatures ranging from -65 to 175 °C, making it suitable for various applications requiring high voltage protection and low forward voltage drop.

FREE WHEELING DIODE

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

DO-214AA

R-PDSO-C2

e3

1

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

400 V

5 uA

.075 us

YES

MATTE TIN

C BEND

DUAL

S2AHE3_A/H by Vishay Intertechnology

S2AHE3_A/H

Vishay Intertechnology

Vishay Intertechnology S2AHE3_A/H is a single rectifier diode with 1.15V VF and 1.5A output current. It has a reverse test voltage of 50V, making it suitable for applications requiring fast recovery time (2us) and low reverse current (1uA). Ideal for use in automotive electronics due to AEC-Q101 reference standard compliance.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AA

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

50 V

1 uA

2 us

50 V

YES

Matte Tin (Sn)

C BEND

DUAL

30

SBRT3M60SA-13 by Diodes Incorporated

SBRT3M60SA-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.59 V

R-PDSO-C2

e3

50 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

100 uA

YES

MATTE TIN

C BEND

DUAL

30

SBRT3U60SA-13 by Diodes Incorporated

SBRT3U60SA-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.56 V

R-PDSO-C2

e3

60 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

500 uA

YES

MATTE TIN

C BEND

DUAL

S3JBHR5G by Taiwan Semiconductor

S3JBHR5G

Taiwan Semiconductor

S3JBHR5G by Taiwan Semiconductor is a single rectifier diode with a max output current of 3A and max repetitive peak reverse voltage of 600V. It operates in temperatures ranging from -55 to 150°C, making it suitable for various electronic applications requiring high-performance diodes in small outline packages.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AA

R-PDSO-C2

e3

1

80 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

AEC-Q101

600 V

10 uA

1.5 us

YES

MATTE TIN

C BEND

DUAL

30

SK26AHR3G by Taiwan Semiconductor

SK26AHR3G

Taiwan Semiconductor

SK26AHR3G by Taiwan Semiconductor is a Schottky rectifier diode with 60V max reverse voltage and 2A max output current. It has a forward voltage of 0.7V, ideal for efficiency applications. This single-configured diode in small outline package is suitable for surface mount technology, operating b/w -55 to 150°C.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.7 V

DO-214AC

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

60 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

10

SK320BHR5G by Taiwan Semiconductor

SK320BHR5G

Taiwan Semiconductor

SK320BHR5G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.95V and output current of 3A. It operates b/w -55 to 150°C, ideal for efficiency applications. This single-configured diode has a max reverse current of 100uA and can handle up to 200V peak reverse voltage.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.95 V

DO-214AA

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

100 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK34BHR5G by Taiwan Semiconductor

SK34BHR5G

Taiwan Semiconductor

SK34BHR5G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 3A. It operates b/w -55°C to 125°C, ideal for applications requiring high efficiency. With a package style of small outline, it is designed for surface mount assembly in various electronic devices.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.5 V

DO-214AA

R-PDSO-C2

e3

1

70 A

1

1

2

125 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

40 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK54CHM6G by Taiwan Semiconductor

SK54CHM6G

Taiwan Semiconductor

SK54CHM6G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 5A. It operates b/w -55°C to 150°C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package ideal for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.55 V

DO-214AB

R-PDSO-C2

e3

1

120 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

40 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK56CHR7G by Taiwan Semiconductor

SK56CHR7G

Taiwan Semiconductor

SK56CHR7G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.75V and output current of 5A. It operates b/w -55°C to 150°C, ideal for efficiency applications in automotive electronics due to its AEC-Q101 reference standard compliance. The diode's small outline package and matte tin terminal finish make it suitable for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

120 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

60 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SS210HR5G by Taiwan Semiconductor

SS210HR5G

Taiwan Semiconductor

SS210HR5G by Taiwan Semiconductor is a Schottky rectifier diode with 100V reverse voltage and 2A output current. It operates b/w -55 to 150°C, ideal for efficiency applications. This single-configured diode comes in a small outline package suitable for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.85 V

DO-214AA

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

100 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

S5MBHR5G by Taiwan Semiconductor

S5MBHR5G

Taiwan Semiconductor

S5MBHR5G by Taiwan Semiconductor is a single rectifier diode with a max output current of 5A and max repetitive peak reverse voltage of 1000V. It is designed for applications requiring high efficiency power conversion in small outline packages, suitable for automotive electronics due to AEC-Q101 reference standard compliance.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-214AA

R-PDSO-C2

e3

1

200 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

1000 V

10 uA

YES

MATTE TIN

C BEND

DUAL

MBRS320PT3G by Onsemi

MBRS320PT3G

Onsemi

MBRS320PT3G by Onsemi is a Schottky rectifier diode with 20V reverse voltage and 4A output current. It operates b/w -65 °C to 150°C, making it ideal for power applications. This single-configured diode comes in a small outline package suitable for surface mount technology.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.5 V

DO-214AB

R-PDSO-C2

e3

1

80 A

1

1

2

150 Cel

-65 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

20 V

2000 uA

YES

SCHOTTKY

TIN

C BEND

DUAL

30

MBRS330PT3G by Onsemi

MBRS330PT3G

Onsemi

MBRS330PT3G by Onsemi is a Schottky rectifier diode with a max output current of 4A and forward voltage of 0.5V. It operates in temperatures ranging from -65 °C to 150°C, making it suitable for power applications. This single-configured diode comes in a small outline package with dual terminals for surface mount assembly.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.5 V

DO-214AB

R-PDSO-C2

e3

1

80 A

1

1

2

150 Cel

-65 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

30 V

2000 uA

YES

SCHOTTKY

TIN

C BEND

DUAL

30

MBRS340PT3G by Onsemi

MBRS340PT3G

Onsemi

MBRS340PT3G by Onsemi is a Schottky rectifier diode with a max output current of 4A and a max repetitive peak reverse voltage of 40V. It is designed for power applications, featuring a small outline package style and surface mount configuration. With an operating temperature range from -65°C to 150°C, it offers reliable performance in various electronic systems.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.5 V

DO-214AB

R-PDSO-C2

e3

1

80 A

1

1

2

150 Cel

-65 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

2000 uA

YES

SCHOTTKY

TIN

C BEND

DUAL

30

MBRS360PT3G by Onsemi

MBRS360PT3G

Onsemi

MBRS360PT3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.63V. It operates b/w -65 to 175°C, has a reverse test voltage of 60V, and is ideal for surface mount applications in electronics requiring high-speed switching capabilities.

FREE WHEELING DIODE

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

.63 V

DO-214AB

R-PDSO-C2

e3

1

125 A

1

1

2

175 Cel

-65 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

30 uA

60 V

YES

SCHOTTKY

TIN

C BEND

DUAL

30

MBRS3100PT3G by Onsemi

MBRS3100PT3G

Onsemi

MBRS3100PT3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and max reverse voltage of 100V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. This surface-mount diode has a small outline package style and dual terminals for easy installation.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.9 V

DO-214AB

R-PDSO-C2

e3

1

130 A

1

1

2

175 Cel

-65 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

200 uA

YES

SCHOTTKY

TIN

C BEND

DUAL

30

MBRS3201PT3G by Onsemi

MBRS3201PT3G

Onsemi

MBRS3201PT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.84V and output current of 3A. It has a fast reverse recovery time of 0.035us and is suitable for applications requiring fast soft recovery power, operating b/w -55 to 150 °C. This single-configured diode comes in a small outline package ideal for surface mount assembly.

FAST SOFT RECOVERY POWER

SINGLE

SILICON

RECTIFIER DIODE

.84 V

DO-214AB

R-PDSO-C2

e3

1

100 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

1000 uA

.035 us

YES

SCHOTTKY

TIN

C BEND

DUAL

30

SK310AHR3G by Taiwan Semiconductor

SK310AHR3G

Taiwan Semiconductor

SK310AHR3G by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 3A and max repetitive peak reverse voltage of 100V. It is designed for efficiency applications, operates b/w -55 to 150°C, and features a small outline package style suitable for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.85 V

DO-214AC

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

100 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

10

SK34AHR3G by Taiwan Semiconductor

SK34AHR3G

Taiwan Semiconductor

SK34AHR3G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 3A. It operates b/w -55°C to 150°C, making it suitable for high-efficiency applications. With a max repetitive peak reverse voltage of 40V, it is ideal for surface mount configurations in small outline packages.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.55 V

DO-214AC

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

40 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

10

TSSA5U50HE3G by Taiwan Semiconductor

TSSA5U50HE3G

Taiwan Semiconductor

TSSA5U50HE3G by Taiwan Semiconductor is a Schottky rectifier diode with a max repetitive peak reverse voltage of 50V and max output current of 5A. It operates b/w -55 to 150°C, making it suitable for high-efficiency applications. This single-configured diode is surface-mountable and features a small outline package style.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.54 V

DO-214AC

R-PDSO-C2

e3

1

75 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

50 V

300 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

S15MCHM6G by Taiwan Semiconductor

S15MCHM6G

Taiwan Semiconductor

S15MCHM6G by Taiwan Semiconductor is a single rectifier diode with a max forward voltage of 1.1V and a max output current of 15A. It is commonly used in applications that require high power rectification, such as power supplies and motor drives.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-214AB

R-PDSO-C2

e3

1

350 A

1

1

2

150 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

1000 V

1 uA

YES

MATTE TIN

C BEND

DUAL