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MBRS3100PT3G

Onsemi

MBRS3100PT3G by Onsemi

MBRS3100PT3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and max reverse voltage of 100V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. This surface-mount diode has a small outline package style and dual terminals for easy installation.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 8,545 parts In-Stock

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Digiode

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Nova Conductors

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Ampacity Inc.

Singapore . 730 parts In-Stock

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$2.010

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730

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AZTECH Wire

Italy . 604 parts In-Stock

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$5.854

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QUARKTWIN TECHNOLOGY LTD

USA . 28,438 parts In-Stock

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Lixinc

USA . 12,452 parts In-Stock

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TANS Electronics

Latvia . 8,254 parts In-Stock

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Problanco Electronics

Mexico . 7,401 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 3,941 parts In-Stock

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Kulean Microsystems

USA . 3,201 parts In-Stock

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Corohmni

South Africa . 462 parts In-Stock

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Corphita

USA . 342 parts In-Stock

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UHIMA Technologies

Türkiye . 143 parts In-Stock

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Bastille Electronics

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Overview

Unlock the power of efficiency with the MBRS3100PT3G by Onsemi. This high-quality diode rectifier offers unparalleled performance in power applications, ensuring reliable and stable operation. Manufactured by Onsemi, a trusted leader in the industry, this product is designed for maximum output current of 3A with a maximum reverse voltage of 100V. With its Schottky technology and low forward voltage, the MBRS3100PT3G provides customers with a cost-effective solution that delivers exceptional value and benefits. Upgrade your power systems with this top-of-the-line diode rectifier today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the diode, making it suitable for various applications.

Surface Mount: YES

Being surface mountable makes installation easy and efficient, saving space on the PCB.

Maximum Reverse Current: 200 uA

Low reverse current allows for efficient operation and minimal power loss.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand challenging environmental conditions.

Diode Type: RECTIFIER DIODE

The rectifier diode type is ideal for converting AC to DC, making this diode suitable for power applications.

Maximum Forward Voltage (VF): 0.9 V

Low forward voltage drop ensures efficient energy conversion and minimal heat dissipation.

Maximum Output Current: 3 A

With a high maximum output current, this diode can handle demanding power requirements.

Technology: SCHOTTKY

Schottky diodes have a fast switching speed and low forward voltage drop, making them ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

Suitable for applications where a higher reverse voltage is required for reliable performance.

Technical Specifications

Diodes & Rectifiers MBRS3100PT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

130 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

200 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS3100PT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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