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NRVRGF1D

Onsemi

NRVRGF1D by Onsemi

NRVRGF1D by Onsemi is a fast recovery rectifier diode with 200V peak reverse voltage, 0.15us reverse recovery time, and 1A output current. It operates b/w -65 to 175°C, suitable for high-power applications requiring quick response times in automotive electronics.

Median Price

$0.127

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,430 parts In-Stock

1+ parts

$0.127

100+ parts

$0.119

1k+ parts

$0.108

10k+ parts

-

7,430

$0.127

$0.119

$0.108

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,633 parts In-Stock

1+ parts

$0.121

100+ parts

-

1k+ parts

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1,633

$0.121

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Vyrian

USA . 5,460 parts In-Stock

1+ parts

-

100+ parts

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5,460

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,421 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

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10k+ parts

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2,421

$0.114

-

-

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Corohmni

South Africa . 403 parts In-Stock

1+ parts

$0.127

100+ parts

-

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403

$0.127

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Component Stockers USA

USA . 5,104 parts In-Stock

1+ parts

$0.130

100+ parts

$0.120

1k+ parts

$0.110

10k+ parts

-

5,104

$0.130

$0.120

$0.110

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AZTECH Wire

Italy . 687 parts In-Stock

1+ parts

$21.170

100+ parts

-

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10k+ parts

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687

$21.170

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 8,034 parts In-Stock

1+ parts

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8,034

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

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TANS Electronics

Latvia . 4,654 parts In-Stock

1+ parts

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4,654

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Kulean Microsystems

USA . 2,322 parts In-Stock

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2,322

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SupplyDigital Components

Austria . 2,197 parts In-Stock

1+ parts

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2,197

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UHIMA Technologies

Türkiye . 715 parts In-Stock

1+ parts

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100+ parts

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715

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Problanco Electronics

Mexico . 427 parts In-Stock

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427

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Overview

Unlock the power of cutting-edge technology with the NRVRGF1D diode by Onsemi. Crafted with precision and expertise, this fast recovery diode offers unparalleled performance and reliability in various applications. Whether you're in the automotive industry, telecommunications sector, or consumer electronics market, this diode is guaranteed to elevate your products to new heights. With its superior quality, high efficiency, and advanced features, the NRVRGF1D is the perfect choice for customers looking to enhance their projects with top-of-the-line components. Experience the difference with Onsemi's NRVRGF1D diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides good insulation and protection for the diode, making it durable and reliable.

Config: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Surface Mount: YES

Surface mount capability makes it easy to integrate into compact electronic devices and PCBs.

Maximum Reverse Recovery Time: 0.15 us

Fast reverse recovery time ensures efficient operation and reduced power losses.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power dissipation and improves overall efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in electronic circuits.

No. of Terminals: 2

Having two terminals simplifies connection and integration into circuits.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space and is ideal for applications with size constraints.

Application: FAST RECOVERY

Designed for fast recovery applications where speed is crucial.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance in various environments.

Minimum Operating Temperature: -65 °C

Wide temperature range allows for operation in extreme cold conditions.

Terminal Position: DUAL

Dual terminal position provides flexibility and ease of connection in circuits.

Maximum Power Dissipation: 1.76 W

High power dissipation capability allows for handling moderate power levels effectively.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type enables efficient conversion of AC to DC in various electronic circuits.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop ensures minimal power loss and efficient operation.

Maximum Output Current: 1 A

High output current capability allows for handling moderate current levels.

Terminal Form: C BEND

C bend terminal form provides ease of soldering and connection in circuits.

Maximum Repetitive Peak Reverse Voltage: 200 V

High maximum repetitive peak reverse voltage rating ensures safe and reliable operation in reverse bias.

Maximum Non Repetitive Peak Forward Current: 30 A

High maximum non-repetitive peak forward current capability allows for handling short-duration current spikes.

Diode Element Material: SILICON

Silicon diode element material is widely used for its high efficiency and durability.

Technical Specifications

Diodes & Rectifiers NRVRGF1D attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

1.76 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.15 us

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRVRGF1D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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