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NRVRGF1G

Onsemi

NRVRGF1G by Onsemi

NRVRGF1G by Onsemi is a fast recovery rectifier diode with a max reverse recovery time of 0.15 us and max output current of 1 A. It operates in temperatures ranging from -65 to 175 °C, making it suitable for high-power applications requiring quick response times. The diode's package style is small outline, with a max power dissipation of 1.76 W, ideal for surface mount configurations in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Adafruit Industries

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Vyrian

USA . 2,515 parts In-Stock

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Digiode

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Nova Conductors

Japan . 750 parts In-Stock

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Ampacity Inc.

Singapore . 56 parts In-Stock

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$0.010

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Aztec Data Supply Inc.

USA . 3,065 parts In-Stock

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AZTECH Wire

Italy . 691 parts In-Stock

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$8.132

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Problanco Electronics

Mexico . 8,036 parts In-Stock

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Continental Prestige Electronics

USA . 4,840 parts In-Stock

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Argo Parts USA

USA . 3,820 parts In-Stock

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SupplyDigital Components

Austria . 2,267 parts In-Stock

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Kulean Microsystems

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Corphita

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Corohmni

South Africa . 456 parts In-Stock

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UHIMA Technologies

Türkiye . 394 parts In-Stock

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Advanced Electronics

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TANS Electronics

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Bastille Electronics

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Overview

Unlock the power of fast recovery with the NRVRGF1G from Onsemi. Designed with precision and quality in mind, this rectifier diode offers a reliable solution for a wide range of applications. Whether you're working on automotive electronics or industrial controls, this diode delivers exceptional performance with its maximum forward voltage of 1.3V and output current of 1A. Trust in Onsemi's expertise in semiconductor manufacturing to bring you a product that meets the highest standards, providing value and efficiency to your projects. Experience the benefits of the NRVRGF1G and elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diode, ensuring reliable performance in various environments.

Config: SINGLE

The single configuration simplifies circuit design and installation, making it easy to integrate this diode into different electronic systems.

Surface Mount: YES

Being surface mountable makes installation and PCB assembly efficient, saving time and effort during production.

Maximum Reverse Recovery Time: 0.15 us

The fast reverse recovery time ensures quick switching characteristics, making it suitable for fast recovery applications.

Maximum Reverse Current: 5 uA

Low reverse current helps in reducing power losses and improving overall efficiency of the circuit.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and orientation during assembly, enhancing installation convenience.

No. of Terminals: 2

Having two terminals simplifies the connection process and ensures proper alignment within the circuit.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range enables the diode to withstand elevated temperature conditions without performance degradation.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature range extends the operational capabilities of the diode to colder environments.

Maximum Power Dissipation: 1.76 W

The high maximum power dissipation rating allows the diode to handle high power levels without overheating.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures that the diode meets automotive industry standards for quality and reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC, making it ideal for rectification applications.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop helps in minimizing power losses and improving efficiency during forward conduction.

Maximum Output Current: 1 A

The high maximum output current rating allows the diode to handle substantial current flows without failure.

Maximum Repetitive Peak Reverse Voltage: 400 V

The high maximum repetitive peak reverse voltage rating ensures reliable operation in circuits with high reverse voltage conditions.

Maximum Non Repetitive Peak Forward Current: 30 A

Ability to handle high non-repetitive peak forward current spikes makes this diode suitable for robust and transient-heavy applications.

Diode Element Material: SILICON

Silicon diodes offer efficient performance, low leakage current, and high reliability, making them a popular choice for a wide range of applications.

Technical Specifications

Diodes & Rectifiers NRVRGF1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

1.76 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.15 us

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRVRGF1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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