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NRVRGF1B

Onsemi

NRVRGF1B by Onsemi

NRVRGF1B by Onsemi is a single rectifier diode with fast recovery time of 0.15 us and max reverse current of 5 uA. It operates b/w -65 to 175 °C, has a max power dissipation of 1.76 W, and is ideal for applications requiring high-speed switching capabilities.

Median Price

$0.149

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 3,083 parts In-Stock

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$0.143

3,083

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$0.143

Rochester

USA . 1,989 parts In-Stock

1+ parts

-

100+ parts

$0.155

1k+ parts

$0.129

10k+ parts

$0.115

1,989

-

$0.155

$0.129

$0.115

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,043 parts In-Stock

1+ parts

$0.121

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2,043

$0.121

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Vyrian

USA . 5,232 parts In-Stock

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5,232

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Distributors (Availability)

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Corphita

USA . 317 parts In-Stock

1+ parts

$0.114

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317

$0.114

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Corohmni

South Africa . 61 parts In-Stock

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$0.127

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61

$0.127

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AZTECH Wire

Italy . 446 parts In-Stock

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$8.760

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446

$8.760

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Kulean Microsystems

USA . 7,848 parts In-Stock

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SupplyDigital Components

Austria . 6,702 parts In-Stock

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TANS Electronics

Latvia . 5,708 parts In-Stock

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5,708

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Problanco Electronics

Mexico . 1,559 parts In-Stock

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1,559

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UHIMA Technologies

Türkiye . 453 parts In-Stock

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Overview

Unlock the possibilities with the NRVRGF1B by Onsemi. Manufactured with precision and quality in mind, this fast recovery rectifier diode offers unparalleled performance and reliability. Ideal for a wide range of applications, this diode is designed to deliver maximum efficiency while maintaining a compact form factor. With a maximum reverse recovery time of 0.15 us and a maximum output current of 1A, this diode provides exceptional value and benefits to customers looking for high-quality components. Trust Onsemi for all your diode needs and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the diode, making it reliable for long-term use.

Maximum Reverse Recovery Time: 0.15 us

The fast reverse recovery time allows for rapid switching, making this diode suitable for applications requiring high-speed performance.

Maximum Reverse Current: 5 uA

The low reverse current minimizes power loss and improves efficiency in the circuit where this diode is used.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance.

Maximum Power Dissipation: 1.76 W

The high power dissipation capability allows the diode to handle significant amounts of power, making it suitable for demanding applications.

Technical Specifications

Diodes & Rectifiers NRVRGF1B attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

1.76 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.15 us

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRVRGF1B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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