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NRVRGF1M

Onsemi

NRVRGF1M by Onsemi

NRVRGF1M by Onsemi is a fast recovery rectifier diode with a max reverse recovery time of 0.5 us and max output current of 1 A. It operates in temperatures ranging from -65 to 175 °C and has a max repetitive peak reverse voltage of 1000 V, making it suitable for high-power applications requiring fast switching capabilities.

Median Price

$0.490

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,202 parts In-Stock

1+ parts

$0.490

100+ parts

$0.265

1k+ parts

$0.169

10k+ parts

$0.132

7,202

$0.490

$0.265

$0.169

$0.132

Mouser Electronics

USA . 6,870 parts In-Stock

1+ parts

$0.490

100+ parts

$0.265

1k+ parts

$0.158

10k+ parts

$0.131

6,870

$0.490

$0.265

$0.158

$0.131

Chip1Stop

Japan . 7,400 parts In-Stock

1+ parts

$1.650

100+ parts

$0.394

1k+ parts

$0.271

10k+ parts

-

7,400

$1.650

$0.394

$0.271

-

Rochester

USA . 7,425 parts In-Stock

1+ parts

-

100+ parts

$0.155

1k+ parts

$0.129

10k+ parts

$0.115

7,425

-

$0.155

$0.129

$0.115

Verical

USA . 7,425 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.143

7,425

-

-

-

$0.143

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,405 parts In-Stock

1+ parts

$0.121

100+ parts

-

1k+ parts

-

10k+ parts

-

2,405

$0.121

-

-

-

Vyrian

USA . 1,382 parts In-Stock

1+ parts

$0.127

100+ parts

-

1k+ parts

-

10k+ parts

-

1,382

$0.127

-

-

-

IBS Electronics

USA . 97,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.160

97,500

-

-

-

$0.160

Flip Electronics

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 969 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

-

969

$0.114

-

-

-

Corohmni

South Africa . 397 parts In-Stock

1+ parts

$0.127

100+ parts

-

1k+ parts

-

10k+ parts

-

397

$0.127

-

-

-

Perfect Parts

USA . 33,488 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33,488

-

-

-

-

TANS Electronics

Latvia . 5,714 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,714

-

-

-

-

Kulean Microsystems

USA . 4,690 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,690

-

-

-

-

SupplyDigital Components

Austria . 3,582 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,582

-

-

-

-

Problanco Electronics

Mexico . 2,440 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,440

-

-

-

-

UHIMA Technologies

Türkiye . 291 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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291

-

-

-

-

Overview

Experience the outstanding quality and reliability of the NRVRGF1M by Onsemi, a leading manufacturer in the industry. This fast recovery rectifier diode is perfect for applications requiring high performance and efficiency. With a maximum output current of 1A and a maximum repetitive peak reverse voltage of 1000V, this diode offers exceptional value and benefits to customers. Trust Onsemi to deliver top-notch products that exceed expectations. Upgrade your electronic devices with the NRVRGF1M and see the difference for yourself!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the diode, ensuring longevity.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort.

Maximum Reverse Recovery Time: 0.5 us

Fast reverse recovery time ensures quick switching speeds, making this diode suitable for high-frequency applications.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves efficiency.

Maximum Operating Temperature: 175 °C

Can operate in a wide range of temperature environments, increasing versatility.

Maximum Power Dissipation: 1.76 W

Can handle high power levels without damage, making it reliable for demanding applications.

Maximum Repetitive Peak Reverse Voltage: 1000 V

Can withstand high reverse voltages, making it suitable for use in power supplies and voltage regulation circuits.

Technical Specifications

Diodes & Rectifiers NRVRGF1M attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1.76 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.5 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVRGF1M Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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