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NRVUS2FA

Onsemi

NRVUS2FA by Onsemi

NRVUS2FA by Onsemi is a single diode with fast recovery time of 0.05 us and low reverse current of 5 uA. It operates at temperatures from -55 to 150 °C, ideal for super fast recovery applications. With a max output current of 1.5 A and peak reverse voltage of 300 V, it's suitable for various rectifier diode needs in electronics.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 60,070 parts In-Stock

1+ parts

$0.108

100+ parts

$0.102

1k+ parts

$0.092

10k+ parts

-

60,070

$0.108

$0.102

$0.092

-

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.093

15,000

-

-

-

$0.093

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 454 parts In-Stock

1+ parts

$0.103

100+ parts

-

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-

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454

$0.103

-

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Flip Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

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15,000

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Vyrian

USA . 7,590 parts In-Stock

1+ parts

-

100+ parts

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7,590

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,334 parts In-Stock

1+ parts

$0.097

100+ parts

-

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2,334

$0.097

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-

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Corohmni

South Africa . 447 parts In-Stock

1+ parts

$0.108

100+ parts

-

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447

$0.108

-

-

-

AZTECH Wire

Italy . 562 parts In-Stock

1+ parts

$17.690

100+ parts

-

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562

$17.690

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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15,000

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SupplyDigital Components

Austria . 7,853 parts In-Stock

1+ parts

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7,853

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TANS Electronics

Latvia . 6,872 parts In-Stock

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6,872

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Kulean Microsystems

USA . 6,254 parts In-Stock

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6,254

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Problanco Electronics

Mexico . 2,390 parts In-Stock

1+ parts

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2,390

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UHIMA Technologies

Türkiye . 667 parts In-Stock

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667

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Overview

Discover the NRVUS2FA by Onsemi, a high-quality rectifier diode that offers super-fast recovery and reliable performance. Manufactured by Onsemi, a trusted name in the industry, this diode is designed for a wide range of applications where precision and efficiency are key. With a maximum reverse test voltage of 300V and a maximum output current of 1.5A, the NRVUS2FA delivers exceptional results in a compact package. Whether you're working on automotive electronics or industrial equipment, this diode provides the value, benefits, and advantages you need to succeed. Upgrade your projects with the NRVUS2FA and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package for this diode & rectifier durable and resistant to environmental factors, ensuring long-term reliability.

Config: SINGLE

Being a single configuration, this diode & rectifier is easy to use and integrate into various electronic circuits.

Surface Mount: YES

With surface mount capability, this diode & rectifier can be easily mounted and soldered onto PCBs, saving assembly time and space.

Maximum Reverse Recovery Time: 0.05 us

The ultra-fast reverse recovery time of 0.05 microseconds ensures efficient and quick switching, making this diode & rectifier suitable for high-speed applications.

Maximum Reverse Current: 5 uA

The low reverse current of 5 microamps helps minimize power losses and improves overall efficiency of the circuit.

Reverse Test Voltage: 300 V

With a high reverse test voltage of 300 volts, this diode & rectifier can handle high voltage applications effectively.

No. of Terminals: 2

Having only 2 terminals simplifies installation and reduces the chances of wiring errors.

Application: SUPER FAST RECOVERY

Designed for super fast recovery applications, this diode & rectifier ensures minimal loss and high efficiency in operations.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this diode & rectifier to withstand elevated temperatures without compromising performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic designs.

Terminal Finish: MATTE TIN

The matte tin finish offers good solderability and corrosion resistance, ensuring a reliable connection.

Terminal Position: DUAL

The dual terminal position provides flexibility in mounting options and simplifies circuit connections.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C allows for a reliable soldering process during assembly.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this component is specifically designed for converting AC to DC efficiently in various electronic devices.

Maximum Forward Voltage (VF): 1 V

The low forward voltage drop of 1 volt reduces power dissipation and heat generation in the circuit.

Maximum Output Current: 1.5 A

With a high maximum output current of 1.5 amps, this diode & rectifier can handle higher loads without overheating.

Terminal Form: C BEND

The C bend terminal form provides a secure connection and ease of soldering during assembly.

Maximum Repetitive Peak Reverse Voltage: 300 V

The high repetitive peak reverse voltage rating of 300 volts ensures reliable operation in high voltage applications.

Maximum Non Repetitive Peak Forward Current: 50 A

The high non-repetitive peak forward current rating of 50 amps allows this diode & rectifier to handle surge currents effectively.

Diode Element Material: SILICON

Made of silicon, a widely used semiconductor material, this diode & rectifier offers good electrical properties and reliability in various applications.

Technical Specifications

Diodes & Rectifiers NRVUS2FA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

SUPER FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.05 us

Reverse Test Voltage:

300 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUS2FA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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