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NRVS3KB

Onsemi

NRVS3KB by Onsemi

NRVS3KB by Onsemi is a single rectifier diode with 800V reverse test voltage and 1.5us max reverse recovery time. Ideal for applications requiring high efficiency and low power loss, such as automotive electronics or industrial power supplies. It features a small outline package with matte tin terminal finish, operating from -55 to 150 °C temperature range.

Median Price

$1.370

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,504 parts In-Stock

1+ parts

$1.370

100+ parts

$0.398

1k+ parts

$0.272

10k+ parts

-

1,504

$1.370

$0.398

$0.272

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 119 parts In-Stock

1+ parts

$1.302

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119

$1.302

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Vyrian

USA . 6,352 parts In-Stock

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6,352

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.168

100+ parts

$0.153

1k+ parts

$0.138

10k+ parts

-

2,000

$0.168

$0.153

$0.138

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Corphita

USA . 2,414 parts In-Stock

1+ parts

$1.233

100+ parts

-

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2,414

$1.233

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Corohmni

South Africa . 253 parts In-Stock

1+ parts

$1.370

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253

$1.370

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AZTECH Wire

Italy . 385 parts In-Stock

1+ parts

$15.110

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385

$15.110

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Perfect Parts

USA . 14,506 parts In-Stock

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14,506

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Kulean Microsystems

USA . 7,958 parts In-Stock

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7,958

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Problanco Electronics

Mexico . 5,015 parts In-Stock

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5,015

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SupplyDigital Components

Austria . 2,554 parts In-Stock

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2,554

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GreenTree Electronics

Israel . 1,604 parts In-Stock

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1,604

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Authorized Procurement Solutions

USA . 1,504 parts In-Stock

1+ parts

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100+ parts

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1,504

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TANS Electronics

Latvia . 1,129 parts In-Stock

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1,129

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UHIMA Technologies

Türkiye . 712 parts In-Stock

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712

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Overview

Unlock the power of precision with the NRVS3KB by Onsemi. Crafted with top-tier materials and cutting-edge technology, this diode offers unparalleled performance and reliability. Ideal for a wide range of applications, this product provides customers with the assurance of quality and efficiency. Elevate your projects with the NRVS3KB and experience the advantage of superior design and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, ensuring it can withstand various environmental conditions.

Config: SINGLE

Single configuration simplifies design and installation, making it easy to integrate into different circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Recovery Time: 1.5 us

Fast reverse recovery time ensures efficient switching performance, reducing power losses and improving overall system efficiency.

Maximum Reverse Current: 10 uA

Low reverse current minimizes power losses and enhances the overall performance of the diode.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy handling and placement within the circuit layout.

Reverse Test Voltage: 800 V

High reverse test voltage ensures reliable and safe operation in high-voltage applications.

No. of Terminals: 2

Having 2 terminals simplifies the connection of the diode within the circuit, making it user-friendly for installation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, allowing for compact and efficient circuit designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows for reliable performance in extreme temperature conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the diode can function effectively in cold environments.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and ensures a secure connection during assembly.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and installation, accommodating a variety of wiring configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature protects the diode from thermal stress during soldering, ensuring its reliability and longevity.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for efficient and reliable soldering of the diode onto the PCB.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures the diode meets automotive industry requirements for reliability and durability.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of AC to DC current, making it suitable for various power applications.

Maximum Forward Voltage (VF): 1.15 V

Low forward voltage drop minimizes power losses and enhances the efficiency of the diode in conducting current.

Maximum Output Current: 3 A

High output current rating allows the diode to handle high-power applications with ease and reliability.

Terminal Form: C BEND

C bend terminal form provides a secure and stable connection, preventing loosening or disconnection during operation.

Maximum Repetitive Peak Reverse Voltage: 800 V

High repetitive peak reverse voltage rating ensures the diode can handle high reverse voltage spikes without failure.

Maximum Non Repetitive Peak Forward Current: 80 A

High non-repetitive peak forward current rating allows the diode to withstand short duration high current surges without damage.

Diode Element Material: SILICON

Silicon diode element material offers reliable and consistent performance in various operating conditions.

Technical Specifications

Diodes & Rectifiers NRVS3KB attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

800 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

1.5 us

Reverse Test Voltage:

800 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVS3KB Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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