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MBRS3201PT3G

Onsemi

MBRS3201PT3G by Onsemi

MBRS3201PT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.84V and output current of 3A. It has a fast reverse recovery time of 0.035us and is suitable for applications requiring fast soft recovery power, operating b/w -55 to 150 °C. This single-configured diode comes in a small outline package ideal for surface mount assembly.

Median Price

$0.360

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,500 parts In-Stock

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$0.360

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$0.350

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Vyrian

USA . 10,282 parts In-Stock

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Digiode

USA . 1,467 parts In-Stock

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AZTECH Wire

Italy . 343 parts In-Stock

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$15.960

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SupplyDigital Components

Austria . 2,908 parts In-Stock

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Kulean Microsystems

USA . 1,861 parts In-Stock

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Corphita

USA . 1,256 parts In-Stock

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Problanco Electronics

Mexico . 1,177 parts In-Stock

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TANS Electronics

Latvia . 1,006 parts In-Stock

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UHIMA Technologies

Türkiye . 308 parts In-Stock

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Corohmni

South Africa . 54 parts In-Stock

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Overview

Discover the MBRS3201PT3G by Onsemi, a top-quality rectifier diode that offers fast soft recovery power for a wide range of applications. With Onsemi's reputation for excellence in manufacturing, this diode ensures reliable performance and durability. Ideal for use in various electronic devices, this diode provides efficient power management and precise control. Experience the benefits of the MBRS3201PT3G and elevate your projects with its high value and unmatched advantages. Choose Onsemi for superior quality and performance in diodes & rectifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and durability, making the product suitable for a wide range of applications.

Maximum Reverse Recovery Time: 0.035 us

This fast reverse recovery time ensures efficient energy conversion and minimizes switching losses.

Maximum Reverse Current: 1000 uA

Low reverse current helps in reducing power dissipation and improving overall efficiency of the circuit.

Application: FAST SOFT RECOVERY POWER

Designed for fast and soft recovery power applications, making it suitable for high-speed switching circuits.

Maximum Operating Temperature: 150 °C

High operating temperature range allows the diode to withstand harsh environmental conditions.

Maximum Output Current: 3 A

High output current rating enables the diode to handle large loads with ease.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds compared to standard diodes, improving overall efficiency.

Maximum Repetitive Peak Reverse Voltage: 200 V

Capable of handling high peak reverse voltages, making it suitable for various power supply and rectification applications.

Technical Specifications

Diodes & Rectifiers MBRS3201PT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST SOFT RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.84 V

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

1000 uA

Maximum Reverse Recovery Time:

.035 us

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS3201PT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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