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C BEND Diodes & Rectifiers 567

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
SK56CH by Taiwan Semiconductor

SK56CH

Taiwan Semiconductor

SK56CH by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.75V and output current of 5A. It has a reverse test voltage of 60V, making it suitable for efficiency applications. This single-configured diode is surface mountable and operates b/w -55°C to 150°C.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

120 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101; IEC-61249-2-21

60 V

500 uA

60 V

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

ES3GBH by Taiwan Semiconductor

ES3GBH

Taiwan Semiconductor

ES3GBH by Taiwan Semiconductor is a single rectifier diode with 400V peak reverse voltage and 1.13V forward voltage, ideal for efficiency applications. With 0.035us reverse recovery time and 3A output current, it operates b/w -55 to 150 °C, meeting AEC-Q101 standards. This small outline diode has matte tin finish and dual terminals in a rectangular package shape.

FREE WHEELING DIODE, SNUBBER DIODE

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.13 V

DO-214AA

R-PDSO-C2

e3

1

100 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

400 V

10 uA

.035 us

YES

MATTE TIN

C BEND

DUAL

B340AX-13 by Diodes Incorporated

B340AX-13

Diodes Incorporated

B340AX-13 by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 3A max output current, and 0.5V max forward voltage. It is ideal for fast soft recovery applications due to its high peak non-repetitive forward current of 65A and low operating temp of -55°C. This single-configured diode comes in a small outline package suitable for surface mount technology.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

.5 V

DO-214AC

R-PDSO-C2

e3

65 A

1

1

2

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

200 uA

40 V

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SBR3M100SB-13 by Diodes Incorporated

SBR3M100SB-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

.81 V

R-PDSO-C2

e3

65 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

1 uA

100 V

YES

MATTE TIN

C BEND

DUAL

B350BQ-13-F by Diodes Incorporated

B350BQ-13-F

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

50 V

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-C2

e3

100 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101; IATF 16949; MIL-STD-202

50 V

500 uA

50 V

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

ES2DA_HF by Diodes Incorporated

ES2DA_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.92 V

R-PDSO-C2

e3

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

5 uA

.025 us

200 V

YES

MATTE TIN

C BEND

DUAL

ES2GA_HF by Diodes Incorporated

ES2GA_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-C2

e3

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

400 V

5 uA

.025 us

400 V

YES

MATTE TIN

C BEND

DUAL

ES2JA_HF by Diodes Incorporated

ES2JA_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

R-PDSO-C2

e3

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

5 uA

.035 us

600 V

YES

MATTE TIN

C BEND

DUAL

30

ES3D_HF by Diodes Incorporated

ES3D_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.92 V

R-PDSO-C2

100 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

10 uA

.025 us

200 V

YES

C BEND

DUAL

S2MHA_HF by Diodes Incorporated

S2MHA_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

GENERAL PURPOSE

1000 V

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

R-PDSO-C2

e3

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

5 uA

1000 V

YES

MATTE TIN

C BEND

DUAL

B240AX-13 by Diodes Incorporated

B240AX-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

FAST RECOVERY

40 V

SINGLE

SILICON

RECTIFIER DIODE

.5 V

R-PDSO-C2

e3

35 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

MIL-STD-202

40 V

250 uA

40 V

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK56CV7G by Taiwan Semiconductor

SK56CV7G

Taiwan Semiconductor

SK56CV7G by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 5A and max repetitive peak reverse voltage of 60V. It is designed for efficiency applications, operates b/w -55 to 150 °C, and features a small outline package style for surface mount usage.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

120 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

60 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

NRVUA120VT3G-GA01 by Onsemi

NRVUA120VT3G-GA01

Onsemi

NRVUA120VT3G-GA01 by Onsemi is a single diode with a reverse test voltage of 200V and max reverse recovery time of 0.035us. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

200 V

SINGLE

SILICON

RECTIFIER DIODE

.875 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

2 uA

.035 us

200 V

YES

C BEND

DUAL

NRVUA160VT3G-GA01 by Onsemi

NRVUA160VT3G-GA01

Onsemi

NRVUA160VT3G-GA01 by Onsemi is a single diode with a reverse recovery time of 0.075 us and max reverse current of 5 uA. It is designed for high voltage ultra fast recovery power applications, with a max operating temperature of 175°C and min breakdown voltage of 600 V.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-C2

30 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

5 uA

.075 us

600 V

YES

C BEND

DUAL

NRVTSA4100ET3G-GA01 by Onsemi

NRVTSA4100ET3G-GA01

Onsemi

NRVTSA4100ET3G-GA01 by Onsemi is a Schottky rectifier diode with a max reverse voltage of 100V and forward current of 4A. It operates b/w -55°C to 175°C, making it suitable for high-efficiency applications. This single-configured diode is surface-mountable and complies with AEC-Q101 standards.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

100 V

SINGLE

SILICON

RECTIFIER DIODE

.68 V

R-PDSO-C2

150 A

1

1

2

175 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

29 uA

100 V

YES

SCHOTTKY

C BEND

DUAL

NRVUA110VT3G-GA01 by Onsemi

NRVUA110VT3G-GA01

Onsemi

NRVUA110VT3G-GA01 by Onsemi is a single diode with a reverse test voltage of 100V and max reverse recovery time of 0.03us. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

100 V

SINGLE

SILICON

RECTIFIER DIODE

.875 V

R-PDSO-C2

50 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

2 uA

.03 us

100 V

YES

C BEND

DUAL

NRVUS220VT3G-GA01 by Onsemi

NRVUS220VT3G-GA01

Onsemi

NRVUS220VT3G-GA01 by Onsemi is a single diode with a reverse test voltage of 200V and max reverse recovery time of 0.035us. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C, making it suitable for various electronic devices.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

200 V

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

2 uA

.035 us

200 V

YES

C BEND

DUAL

NRVTSA4100T3G-GA01 by Onsemi

NRVTSA4100T3G-GA01

Onsemi

NRVTSA4100T3G-GA01 by Onsemi is a Schottky rectifier diode with 100V reverse test voltage, 4A max output current, and 0.66V max forward voltage. Ideal for efficiency applications with AEC-Q101 standard compliance.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

100 V

SINGLE

SILICON

RECTIFIER DIODE

.66 V

R-PDSO-C2

50 A

1

1

2

150 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

25 uA

100 V

YES

SCHOTTKY

C BEND

DUAL

NRVTSS3100ET3G-GA01 by Onsemi

NRVTSS3100ET3G-GA01

Onsemi

NRVTSS3100ET3G-GA01 by Onsemi is a Schottky rectifier diode with 100V reverse test voltage, 5uA max reverse current, and 3A max output current. Ideal for efficiency applications, it operates b/w -55 to 175 °C and meets AEC-Q101 standard.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

100 V

SINGLE

SILICON

RECTIFIER DIODE

.995 V

R-PDSO-C2

90 A

1

1

2

175 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

5 uA

100 V

YES

SCHOTTKY

C BEND

DUAL

NRVUA210VT3G-GA01 by Onsemi

NRVUA210VT3G-GA01

Onsemi

NRVUA210VT3G-GA01 by Onsemi is a single diode with a reverse test voltage of 100V and max reverse recovery time of 0.03us. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

100 V

SINGLE

SILICON

RECTIFIER DIODE

.94 V

R-PDSO-C2

50 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

2 uA

.03 us

100 V

YES

C BEND

DUAL

NRVUHS160VT3G-GA01 by Onsemi

NRVUHS160VT3G-GA01

Onsemi

NRVUHS160VT3G-GA01 by Onsemi is a single diode with 600V reverse test voltage, 0.035us recovery time, and 20uA reverse current. Ideal for ultra-fast power applications with operating temperatures from -65 to 175 °C.

FREE WHEELING DIODE

ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

2.4 V

R-PDSO-C2

15 A

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

20 uA

.035 us

600 V

YES

C BEND

DUAL

SURA8205T3G-GA01 by Onsemi

SURA8205T3G-GA01

Onsemi

SURA8205T3G-GA01 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.03 us and max output current of 2 A. It is designed for high voltage ultra-fast recovery power applications, featuring a package style of small outline and operating temperature range from -65 to 175 °C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

50 V

SINGLE

SILICON

RECTIFIER DIODE

.94 V

R-PDSO-C2

50 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

50 V

2 uA

.03 us

50 V

YES

C BEND

DUAL

NRVUS240VT3G-GA01 by Onsemi

NRVUS240VT3G-GA01

Onsemi

NRVUS240VT3G-GA01 by Onsemi is a single rectifier diode with 400V reverse test voltage and 0.065us reverse recovery time. Ideal for high voltage ultra-fast power applications, it has a max output current of 2A and operates b/w -65 to 175 °C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

400 V

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

R-PDSO-C2

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

400 V

5 uA

.065 us

400 V

YES

C BEND

DUAL

SURA8260T3G-GA01 by Onsemi

SURA8260T3G-GA01

Onsemi

SURA8260T3G-GA01 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.075 us and a max reverse current of 5 uA. It is designed for high voltage ultra-fast recovery power applications, featuring a max operating temperature of 175 °C and a min breakdown voltage of 600 V.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.45 V

R-PDSO-C2

30 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

5 uA

.075 us

600 V

YES

C BEND

DUAL

SURA8240T3G-GA01 by Onsemi

SURA8240T3G-GA01

Onsemi

SURA8240T3G-GA01 by Onsemi is a single diode with a reverse test voltage of 400V and max forward voltage of 1.3V. It has a fast recovery time of 0.065us, making it suitable for high voltage applications requiring up to 2A output current. The diode is designed for use in automotive electronics due to its AEC-Q101 reference standard compliance.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

400 V

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

R-PDSO-C2

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

400 V

5 uA

.065 us

400 V

YES

C BEND

DUAL

NRVTSA3100ET3G-GA01 by Onsemi

NRVTSA3100ET3G-GA01

Onsemi

NRVTSA3100ET3G-GA01 by Onsemi is a Schottky rectifier diode with 100V reverse test voltage, 3A max output current, and 0.995V max forward voltage. It is ideal for efficiency applications in automotive electronics due to AEC-Q101 compliance and -55 to 175 °C operating temperature range.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

100 V

SINGLE

SILICON

RECTIFIER DIODE

.995 V

R-PDSO-C2

50 A

1

1

2

175 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

5 uA

100 V

YES

SCHOTTKY

C BEND

DUAL

SURS8260T3G-GA01 by Onsemi

SURS8260T3G-GA01

Onsemi

SURS8260T3G-GA01 by Onsemi is a single diode with 600V reverse test voltage, 0.075us reverse recovery time, and 5uA reverse current. Ideal for high voltage ultra-fast power applications with max operating temp of 175 °C. Package style: small outline, surface mountable.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.45 V

R-PDSO-C2

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

5 uA

.075 us

600 V

YES

C BEND

DUAL

SURA8215T3G-GA01 by Onsemi

SURA8215T3G-GA01

Onsemi

SURA8215T3G-GA01 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.035 us and max reverse current of 2 uA. It is designed for high voltage ultra-fast recovery power applications, featuring a package style of small outline and operating temperatures ranging from -65 to 175 °C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

150 V

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

150 V

2 uA

.035 us

150 V

YES

C BEND

DUAL

NRVUA220VT3G-GA01 by Onsemi

NRVUA220VT3G-GA01

Onsemi

NRVUA220VT3G-GA01 by Onsemi is a single diode with 0.035 us reverse recovery time, 2 uA reverse current, and 200 V reverse test voltage. Ideal for high voltage ultra fast recovery power applications. Operating temp range -65 to 175 °C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

200 V

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

2 uA

.035 us

200 V

YES

C BEND

DUAL

SURA8130T3G-GA01 by Onsemi

SURA8130T3G-GA01

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

300 V

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

R-PDSO-C2

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

300 V

5 uA

.065 us

300 V

YES

C BEND

DUAL

NRVUA140VT3G-GA01 by Onsemi

NRVUA140VT3G-GA01

Onsemi

NRVUA140VT3G-GA01 by Onsemi is a single rectifier diode with 400V reverse test voltage and 0.065us reverse recovery time. Ideal for high voltage ultra-fast power applications, it has a max output current of 2A and operates b/w -65 to 175 °C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

400 V

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

R-PDSO-C2

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

400 V

5 uA

.065 us

400 V

YES

C BEND

DUAL

SURS8320T3G-GA01 by Onsemi

SURS8320T3G-GA01

Onsemi

SURS8320T3G-GA01 by Onsemi is a single diode with 0.035us reverse recovery time, 5uA reverse current, and 200V reverse test voltage. It is used in high voltage ultra-fast recovery power applications due to its small outline package style and silicon diode element material.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

200 V

SINGLE

SILICON

RECTIFIER DIODE

.89 V

R-PDSO-C2

100 A

1

1

2

175 Cel

-65 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

5 uA

.035 us

200 V

YES

C BEND

DUAL

SURS8340T3G-GA01 by Onsemi

SURS8340T3G-GA01

Onsemi

SURS8340T3G-GA01 by Onsemi is a single diode with 400V reverse test voltage, 0.075us reverse recovery time, and 10uA reverse current. Ideal for high voltage ultra-fast power applications with max output current of 4A and AEC-Q101 reference standard compliance.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

400 V

SINGLE

SILICON

RECTIFIER DIODE

1.28 V

R-PDSO-C2

100 A

1

1

2

175 Cel

-65 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

400 V

10 uA

.075 us

400 V

YES

C BEND

DUAL

SURS8360T3G-GA01 by Onsemi

SURS8360T3G-GA01

Onsemi

SURS8360T3G-GA01 by Onsemi is a single diode with 600V reverse test voltage, 0.075us reverse recovery time, and 10uA reverse current. Ideal for high voltage ultra-fast power applications, it operates b/w -65 to 175 °C with a max output current of 4A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.28 V

R-PDSO-C2

100 A

1

1

2

175 Cel

-65 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

10 uA

.075 us

600 V

YES

C BEND

DUAL

NRVUS120VT3G-GA01 by Onsemi

NRVUS120VT3G-GA01

Onsemi

NRVUS120VT3G-GA01 by Onsemi is a single rectifier diode with a reverse test voltage of 200V and max reverse recovery time of 0.035us. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

200 V

SINGLE

SILICON

RECTIFIER DIODE

.875 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

2 uA

.035 us

200 V

YES

C BEND

DUAL

NRVUS160VT3G-GA01 by Onsemi

NRVUS160VT3G-GA01

Onsemi

NRVUS160VT3G-GA01 by Onsemi is a single diode with 600V reverse test voltage and 0.075us reverse recovery time. Ideal for high voltage ultra-fast power applications, it has a max output current of 2A and operates b/w -65 to 175 °C.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-C2

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

5 uA

.075 us

600 V

YES

C BEND

DUAL

NRVUS110VT3G-GA01 by Onsemi

NRVUS110VT3G-GA01

Onsemi

NRVUS110VT3G-GA01 by Onsemi is a single diode with 100V reverse test voltage, 0.035us reverse recovery time, and 2uA reverse current. Ideal for high voltage ultra-fast power applications with AEC-Q101 standard compliance.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

100 V

SINGLE

SILICON

RECTIFIER DIODE

.875 V

R-PDSO-C2

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

2 uA

.035 us

100 V

YES

C BEND

DUAL

NRVUS360VBT3G-GA01 by Onsemi

NRVUS360VBT3G-GA01

Onsemi

NRVUS360VBT3G-GA01 by Onsemi is a single rectifier diode with a reverse test voltage of 600V and max reverse recovery time of 0.075us. It is designed for high voltage ultra-fast power applications, operating b/w -65 to 175 °C, with a max output current of 3A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

600 V

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-PDSO-C2

100 A

1

1

2

175 Cel

-65 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

600 V

3 uA

.075 us

600 V

YES

C BEND

DUAL

MUR360SV7G by Taiwan Semiconductor

MUR360SV7G

Taiwan Semiconductor

MUR360SV7G by Taiwan Semiconductor is a single rectifier diode with a max reverse recovery time of 0.05 us and a max output current of 3A. It operates efficiently at temperatures ranging from -55 to 175 °C, making it ideal for various applications requiring high voltage and low forward voltage diodes.

FREE WHEELING DIODE

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

DO-214AB

R-PDSO-C2

e3

1

75 A

1

1

2

175 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

IEC-61249-2-21

600 V

10 uA

.05 us

600 V

YES

MATTE TIN

C BEND

DUAL