Loading...

NRVUS110VT3G-GA01

Onsemi

NRVUS110VT3G-GA01 by Onsemi

NRVUS110VT3G-GA01 by Onsemi is a single diode with 100V reverse test voltage, 0.035us reverse recovery time, and 2uA reverse current. Ideal for high voltage ultra-fast power applications with AEC-Q101 standard compliance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 71,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

71,000

-

-

-

-

Vyrian

USA . 5,638 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,638

-

-

-

-

Digiode

USA . 2,176 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,176

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 974 parts In-Stock

1+ parts

$19.480

100+ parts

-

1k+ parts

-

10k+ parts

-

974

$19.480

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 8,586 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,586

-

-

-

-

Kulean Microsystems

USA . 5,956 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,956

-

-

-

-

Problanco Electronics

Mexico . 5,598 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,598

-

-

-

-

SupplyDigital Components

Austria . 5,147 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,147

-

-

-

-

TANS Electronics

Latvia . 3,323 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,323

-

-

-

-

Corphita

USA . 1,731 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,731

-

-

-

-

UHIMA Technologies

Türkiye . 991 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

991

-

-

-

-

Corohmni

South Africa . 414 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

414

-

-

-

-

Overview

Discover the next level of reliability and performance with the NRVUS110VT3G-GA01 by Onsemi. As a leader in diodes and rectifiers, Onsemi delivers top-quality products that excel in high voltage ultra-fast recovery power applications. With a maximum reverse recovery time of 0.035 us and a maximum output current of 2 A, this single-configured, surface mount diode offers unmatched value and efficiency. Trust Onsemi for cutting-edge technology and superior craftsmanship that will elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection to the diode, making it suitable for various environments.

Maximum Reverse Recovery Time: 0.035 us

This ultra-fast reverse recovery time ensures efficient switching and high performance in applications requiring quick response times.

Reverse Test Voltage: 100 V

The high reverse test voltage of 100 V ensures reliable operation in high voltage applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this diode can withstand elevated temperatures without compromising performance.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures the diode meets automotive industry requirements for quality and reliability.

Technical Specifications

Diodes & Rectifiers NRVUS110VT3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

100 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.875 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

100 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20