Loading...

SURA8215T3G-GA01

Onsemi

SURA8215T3G-GA01 by Onsemi

SURA8215T3G-GA01 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.035 us and max reverse current of 2 uA. It is designed for high voltage ultra-fast recovery power applications, featuring a package style of small outline and operating temperatures ranging from -65 to 175 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

44,000

-

-

-

-

Vyrian

USA . 13,022 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,022

-

-

-

-

Digiode

USA . 1,433 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,433

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 589 parts In-Stock

1+ parts

$11.800

100+ parts

-

1k+ parts

-

10k+ parts

-

589

$11.800

-

-

-

Kulean Microsystems

USA . 5,495 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,495

-

-

-

-

TANS Electronics

Latvia . 4,566 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,566

-

-

-

-

Problanco Electronics

Mexico . 4,487 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,487

-

-

-

-

SupplyDigital Components

Austria . 4,286 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,286

-

-

-

-

UHIMA Technologies

Türkiye . 991 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

991

-

-

-

-

Corphita

USA . 379 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

379

-

-

-

-

Corohmni

South Africa . 143 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

143

-

-

-

-

Overview

Enhance your power supply designs with the SURA8215T3G-GA01 diode by Onsemi. As a leader in diodes and rectifiers, Onsemi ensures top-notch quality and reliability for all their products. Ideal for high voltage ultra fast recovery power applications, this diode offers a maximum reverse current of 2 uA and a maximum forward voltage of 0.95 V. With a small outline package style and dual terminal position, this diode is perfect for various electronic projects. Trust Onsemi to provide you with the best-in-class components for your power supply needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring reliable performance.

Config: SINGLE

The single configuration simplifies the circuit design and installation process.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Maximum Reverse Recovery Time: 0.035 us

The ultra-fast reverse recovery time ensures efficient operation and minimal power loss.

Maximum Reverse Current: 2 uA

Low reverse current minimizes power dissipation and improves overall efficiency.

Package Shape: RECTANGULAR

Rectangular shape enables easy placement and mounting on the PCB.

Reverse Test Voltage: 150 V

The high reverse test voltage ensures reliable performance in high voltage applications.

No. of Terminals: 2

Two terminals simplify the connection process and reduce complexity in the circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact designs.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Designed for high voltage applications requiring ultra-fast recovery power, making it ideal for demanding situations.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability in a wide range of operating conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for use in extreme temperature environments.

Terminal Position: DUAL

Dual terminal position provides flexibility in connection options and enhances usability.

Minimum Breakdown Voltage: 150 V

High minimum breakdown voltage ensures protection against voltage spikes and surges.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC with high efficiency.

Maximum Forward Voltage (VF): 0.95 V

Low maximum forward voltage minimizes power loss and improves energy efficiency.

Maximum Output Current: 2 A

High maximum output current allows for handling of heavy loads and high power applications.

Terminal Form: C BEND

C bend terminal form offers secure and reliable connections, reducing the risk of disconnections.

Maximum Repetitive Peak Reverse Voltage: 150 V

High maximum repetitive peak reverse voltage provides protection against reverse voltage surges.

Maximum Non Repetitive Peak Forward Current: 40 A

High maximum non-repetitive peak forward current capability allows for handling of short-term high current surges.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in a wide range of applications.

Technical Specifications

Diodes & Rectifiers SURA8215T3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

150 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

150 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19