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SURA8110T3G

Onsemi

SURA8110T3G by Onsemi

SURA8110T3G by Onsemi is a single diode with 100V reverse test voltage, 0.03us reverse recovery time, and 2uA max reverse current. It is used in ultra-fast recovery power applications due to its small outline package style and dual terminal position.

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AZTECH Wire

Italy . 666 parts In-Stock

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Kepictronics

USA . 72,540 parts In-Stock

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A-Z Elektronik GmbH

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Problanco Electronics

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TANS Electronics

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SupplyDigital Components

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Kulean Microsystems

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Overview

Discover the power of the SURA8110T3G by Onsemi, a high-quality rectifier diode that offers ultra-fast recovery power for various applications. Manufactured by Onsemi, a trusted leader in the industry, this diode provides exceptional value with its small outline package style and dual terminals for easy installation. With a maximum operating temperature of 175 °C and a minimum breakdown voltage of 100V, this diode is perfect for demanding environments where reliability is crucial. Upgrade your power systems today with the SURA8110T3G and experience the benefits of superior performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Config: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into different systems.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly on circuit boards, saving space and reducing manufacturing costs.

Maximum Reverse Recovery Time: 0.03 us

The ultra-fast reverse recovery time ensures efficient operation and minimizes power loss in high-speed applications.

Maximum Reverse Current: 2 uA

Low reverse current helps in reducing energy consumption and improving overall efficiency of the system.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and mounting in electronic circuits.

Reverse Test Voltage: 100 V

High reverse test voltage ensures reliable performance and protection against voltage spikes.

No. of Terminals: 2

Having only 2 terminals simplifies installation and reduces the chances of error during assembly.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board, making it suitable for compact electronic devices.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery power applications, ensuring efficient power conversion and performance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows for reliable operation even in harsh environmental conditions.

Minimum Operating Temperature: -65 °C

Wide minimum operating temperature range enables the diode to function in extreme cold conditions as well.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and annealed terminals ensure reliable connections in the circuit.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and allows for easy connectivity.

Minimum Breakdown Voltage: 100 V

High minimum breakdown voltage ensures protection against voltage surges and spikes.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality in automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC power, suitable for various power supply applications.

Maximum Forward Voltage (VF): 0.875 V

Low forward voltage drop helps in minimizing power loss and improving efficiency in power conversion.

Maximum Output Current: 2 A

High maximum output current capability makes it suitable for power-intensive applications.

Technology: BLANK

Specific technology details are not provided, but the overall specs suggest a high-performance diode suitable for various applications.

Terminal Form: J BEND

J bend terminal form allows for easy and secure mounting on the circuit board during assembly.

Maximum Repetitive Peak Reverse Voltage: 100 V

High repetitive peak reverse voltage rating ensures long-term reliability and protection against voltage transients.

Maximum Non Repetitive Peak Forward Current: 50 A

High non-repetitive peak forward current handling capability makes it suitable for surge protection applications.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in power conversion applications.

Technical Specifications

Diodes & Rectifiers SURA8110T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

100 V

Case Connection:

NONE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.875 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.03 us

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

BLANK

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SURA8110T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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