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SURA8205T3G

Onsemi

SURA8205T3G by Onsemi

SURA8205T3G by Onsemi is a single diode with a reverse test voltage of 50V and max forward voltage of 0.94V. It has a fast recovery time of 0.03us, making it suitable for high voltage power applications. With a max output current of 2A and AEC-Q101 reference standard compliance, it is ideal for automotive electronics.

Median Price

$0.242

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 95,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.270

95,000

-

-

-

$0.270

Flip Electronics (Authorized)

USA . 95,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

95,000

-

-

-

-

Rochester

USA . 45 parts In-Stock

1+ parts

-

100+ parts

$0.213

1k+ parts

$0.177

10k+ parts

$0.158

45

-

$0.213

$0.177

$0.158

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 53 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

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53

$0.166

-

-

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Vyrian

USA . 779 parts In-Stock

1+ parts

$0.175

100+ parts

-

1k+ parts

-

10k+ parts

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779

$0.175

-

-

-

Flip Electronics

USA . 95,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

-

95,000

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 63,157 parts In-Stock

1+ parts

$0.149

100+ parts

-

1k+ parts

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63,157

$0.149

-

-

-

Corphita

USA . 204 parts In-Stock

1+ parts

$0.158

100+ parts

-

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204

$0.158

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Corohmni

South Africa . 63 parts In-Stock

1+ parts

$0.175

100+ parts

-

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63

$0.175

-

-

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Component Stockers USA

USA . 40 parts In-Stock

1+ parts

$0.180

100+ parts

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40

$0.180

-

-

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Perfect Parts

USA . 11,200 parts In-Stock

1+ parts

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11,200

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Kulean Microsystems

USA . 7,484 parts In-Stock

1+ parts

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7,484

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TANS Electronics

Latvia . 6,624 parts In-Stock

1+ parts

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6,624

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Problanco Electronics

Mexico . 4,715 parts In-Stock

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4,715

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A-Z Elektronik GmbH

Germany . 4,569 parts In-Stock

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4,569

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SupplyDigital Components

Austria . 2,142 parts In-Stock

1+ parts

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2,142

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UHIMA Technologies

Türkiye . 959 parts In-Stock

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959

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Overview

Discover the SURA8205T3G by Onsemi, a high-quality rectifier diode designed for high voltage ultra-fast recovery power applications. Manufactured by Onsemi, known for their exceptional craftsmanship and cutting-edge technology, this diode offers unparalleled performance and reliability. With a maximum reverse recovery time of 0.03 us and a maximum output current of 2A, this small outline package delivers outstanding results. Whether you're designing power supplies, inverters, or motor drives, the SURA8205T3G provides the value, benefits, and advantages you need to take your project to the next level. Choose Onsemi for superior quality and performance in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring long-term reliability.

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Maximum Reverse Recovery Time: 0.03 us

The ultra-fast reverse recovery time ensures quick response and efficiency in power applications.

Maximum Reverse Current: 2 uA

Low reverse current minimizes power losses and improves overall efficiency.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and alignment on the PCB.

Reverse Test Voltage: 50 V

Suitable for high voltage applications, ensuring reliable performance under varying conditions.

No. of Terminals: 2

Simplified two-terminal design for straightforward connectivity.

Package Style (Meter): SMALL OUTLINE

Compact small outline package saves space and allows for high-density PCB layouts.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Ideal for high voltage power applications that require fast recovery times and efficient operation.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for reliable performance in various environments.

Minimum Operating Temperature: -65 °C

Ability to operate at low temperatures expands the range of potential applications for the diode.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides corrosion resistance and ensures reliable electrical connections.

Terminal Position: DUAL

Dual terminal position for easy and secure soldering onto the PCB.

Minimum Breakdown Voltage: 50 V

High breakdown voltage rating ensures protection against voltage spikes and surges.

Reference Standard: AEC-Q101

Compliance with automotive industry standard ensures quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode design for converting AC to DC power with low forward voltage drop.

Maximum Forward Voltage (VF): 0.94 V

Low forward voltage drop minimizes power losses and improves efficiency in power conversion.

Maximum Output Current: 2 A

High output current capability for handling power requirements in various applications.

Terminal Form: J BEND

J bend terminal form for secure mounting and electrical connections on the PCB.

Maximum Repetitive Peak Reverse Voltage: 50 V

High repetitive peak reverse voltage rating for reliable performance in high voltage applications.

Maximum Non Repetitive Peak Forward Current: 50 A

Ability to handle high non-repetitive peak forward current for short duration power surges.

Diode Element Material: SILICON

Silicon diode element material for efficient power conversion and high reliability.

Technical Specifications

Diodes & Rectifiers SURA8205T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

50 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.94 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.03 us

Reverse Test Voltage:

50 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SURA8205T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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