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SURA8130T3G-VF01

Onsemi

SURA8130T3G-VF01 by Onsemi

SURA8130T3G-VF01 by Onsemi is a single diode with a reverse test voltage of 400V and max forward voltage of 1.1V. It has a fast recovery time of 0.065us, making it suitable for high voltage applications requiring ultra-fast power recovery. This rectifier diode operates b/w -65 to 175 °C and can handle up to 2A output current.

Median Price

$0.580

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,143 parts In-Stock

1+ parts

$0.580

100+ parts

$0.237

1k+ parts

$0.152

10k+ parts

$0.110

4,143

$0.580

$0.237

$0.152

$0.110

Distributors (In-Stock)

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Digiode

USA . 1,695 parts In-Stock

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Vyrian

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QUARKTWIN TECHNOLOGY LTD

USA . 8,808 parts In-Stock

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Problanco Electronics

Mexico . 8,205 parts In-Stock

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TANS Electronics

Latvia . 1,976 parts In-Stock

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Corphita

USA . 1,768 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 463 parts In-Stock

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Corohmni

South Africa . 446 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 35 parts In-Stock

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Overview

Discover the power of reliable and efficient performance with the SURA8130T3G-VF01 by Onsemi. As a leading manufacturer in the industry, Onsemi's diodes and rectifiers are known for their high quality and durability. Perfect for high voltage ultra fast recovery power applications, this product offers customers exceptional value and benefits. With a maximum reverse recovery time of 0.065 us and a maximum reverse current of 5 uA, the SURA8130T3G-VF01 delivers superior performance that will exceed your expectations. Choose Onsemi for unmatched quality and reliability in diodes and rectifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.065 us

Allows for fast switching and efficient performance in high voltage applications.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for a wide range of operating conditions.

Peak Reflow Temperature °C: 260

The diode can withstand high reflow temperatures during manufacturing processes, ensuring reliability and quality.

Maximum Output Current: 2 A

Capable of handling high currents, making it suitable for power applications.

Technical Specifications

Diodes & Rectifiers SURA8130T3G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.065 us

Reverse Test Voltage:

400 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURA8130T3G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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